Target cooling back plate and preparation method thereof

A target and backplane technology, applied in the field of magnetron sputtering, can solve the problems of low reuse rate of cooling backplane, high cost of cooling backplane, water leakage of flange joints and cooling backplane, etc., to improve reuse efficiency, prevent leakage problems, and increase the number of times consumed

Active Publication Date: 2021-02-26
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the high pressure of both the water inlet and the water outlet, it is very easy to cause water leakage between the flange connection of the argon arc welding connection and the cooling back plate
In addition, due to the high cost of the cooling backplane, it often needs to be reused, but the recycling rate of the cooling backplane is low at this stage

Method used

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  • Target cooling back plate and preparation method thereof
  • Target cooling back plate and preparation method thereof
  • Target cooling back plate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] This embodiment provides a target cooling back plate and a preparation method thereof, such as Figure 1-4 As shown, the target cooling back plate includes a base 1 and a cover plate 2, the base 1 includes a cooling water channel 11, a water inlet 12 and a water outlet 13, and the water inlet 12 and the water outlet 13 are opened in the On the bottom surface of the base 1 , inclined water passages 14 are opened between the cooling water passage 11 , the water inlet 12 and the water outlet 13 respectively. The base 1 is connected to the water inlet 12 and the water outlet. Flange connection holes 15 are respectively opened around 13;

[0059] The thickness of the cover plate 2 is 4.5 mm, the width of the cooling water channel 11 is 30 mm, and the depth is 8 mm, a sandblasting layer is provided on the inner surface of the cooling water channel 11, and the target material cools the outside of the back plate The shape is a triangle.

[0060] The preparation method compris...

Embodiment 2

[0066] This embodiment provides a target cooling backplane and a preparation method thereof. The target cooling backplane includes a base 1 and a cover plate 2 , and the base 1 includes a cooling water channel 11 and a water inlet 12 and a water outlet 13 . , the water inlet 12 and the water outlet 13 are opened on the bottom surface of the base 1, the cooling water channel 11 and the water inlet 12 and the water outlet 13 are respectively opened with inclined water channels 14, the The base 1 is provided with flange connection holes 15 around the water inlet 12 and the water outlet 13 respectively;

[0067] Wherein, the thickness of the cover plate 2 is 5 mm, the width of the cooling water channel 11 is 50 mm, and the depth is 12 mm, a sandblasting layer is arranged on the inner surface of the cooling water channel 11, and the external shape of the target cooling back plate is is circular.

[0068] The preparation method comprises the following steps:

[0069] (1) machining...

Embodiment 3

[0074] This embodiment provides a target cooling backplane and a preparation method thereof. The target cooling backplane includes a base 1 and a cover plate 2 , and the base 1 includes a cooling water channel 11 and a water inlet 12 and a water outlet 13 . , the water inlet 12 and the water outlet 13 are opened on the bottom surface of the base 1, the cooling water channel 11 and the water inlet 12 and the water outlet 13 are respectively opened with inclined water channels 14, the The base 1 is provided with flange connection holes 15 around the water inlet 12 and the water outlet 13 respectively;

[0075] The thickness of the cover plate 2 is 4.8 mm, the width of the cooling water channel 11 is 40 mm, and the depth is 10 mm, a sandblasting layer is provided on the inner surface of the cooling water channel 11, and the target material cools the outside of the back plate The shape is a triangle.

[0076] The preparation method comprises the following steps:

[0077] (1) mac...

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Abstract

The invention relates to a target cooling back plate and a preparation method thereof. A base of the target cooling back plate adopts an integrated design of flange connecting pieces of a water inletand a water outlet as one part of the base, and correspondingly, an inclined water way is formed between a cooling water way in the base and the water inlet/ outlet, so that the leakage problem in thewater inlet/outlet is effectively prevented. The preparation method comprises the following steps that: the thickness of a cover plate of the target cooling back plate is increased to 4.5-5mm; the sand blasting treatment is performed on the inner surface of the cooling water way of the base; the cover plate and the base are welded by vacuum brazing to obtain a target cooling back plate crude product; and then, the machining is performed by dint of support and fixation of bosses with the same heights to obtain the target cooling back plate, so that the excellent welding condition can be guaranteed, the machining is convenient, and the repeated utilization rate of the target cooling back plate can be effectively increased.

Description

technical field [0001] The invention relates to the technical field of magnetron sputtering, in particular to a target cooling back plate and a preparation method thereof. Background technique [0002] Physical vapor deposition (Physical Vapour Deposition, PVD) refers to the use of low-voltage, high-current arc discharge technology under vacuum conditions, the use of gas discharge to vaporize the material source and ionize the vaporized material and gas, and then pass through. The acceleration of the electric field causes the evaporated substances and their reaction products to be deposited on the workpiece to form a film with a special function. PVD technology is the core technology of semiconductor chip manufacturing, solar energy industry, LCD manufacturing and other industries. The main methods include vacuum evaporation, arc plasma plating, ion coating, molecular beam epitaxy and sputtering coating. [0003] Magnetron sputtering is a commonly used type of PVD technolog...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
CPCC23C14/34Y02E30/10
Inventor 姚力军潘杰边逸军王学泽王垚
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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