Memory and forming method thereof

Abstract

The invention provides a memory and a forming method thereof. A node contact window is defined by utilizing a bit line and an insulating line, a contact plug filling the node contact window is enabledto protrude upwards out of the node contact window, adjacent contact plugs are further spaced by utilizing a spacing structure, and a first gap is further formed in the spacing structure. Therefore,the dielectric constant of the dielectric material between the adjacent contact plugs is reduced, and the parasitic effect of the device is effectively improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a memory and a forming method thereof. Background technique [0002] With the development of semiconductor technology, the density of semiconductor elements in integrated circuits has increased, and the spacing between adjacent semiconductor elements has also decreased, resulting in the parasitic effects between adjacent conductive parts becoming more and more incompatible. ignore. [0003] Specifically, for a dynamic random access memory (Dynamic Random Access Memory, DRAM), it usually has a storage cell array, the storage cell array includes a plurality of storage cells arranged in an array, and the memory also has multiple Each bit line is electrically connected to a corresponding memory cell, and the memory also includes a storage capacitor for storing charge representing stored information, and the memory cell can be inserted through a contact The storage capacitors...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a memory to solve the problem of large parasitic effects in the existing memory

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