Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of photo-induced enhanced quantum dot film

A production method and quantum dot film technology, applied in chemical instruments and methods, nano optics, luminescent materials, etc., can solve the problems of good isolation function, poor isolation function, low photoluminescence efficiency, etc., to achieve increased adhesion, Improved stability, good aging resistance and mechanical properties

Pending Publication Date: 2021-01-15
NINGBO DXC NEW MATERIAL TECH
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In order to overcome the disadvantages of low photoluminescence efficiency and poor isolation function of the existing photoluminescent quantum dot film, the present invention provides a method for manufacturing a photoluminescence enhanced quantum dot film, and the prepared quantum dot film photoluminescence High efficiency, good isolation function

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The present invention will be further described in detail below in combination with specific embodiments.

[0018] A method for making a light-induced enhanced quantum dot film, comprising the following steps:

[0019] S1: Provide a quantum dot base film, which is an acrylic resin film containing quantum dots.

[0020] S2: Coating a layer of micron-sized silicon dioxide particles on the quantum dot base film, the recommended diameter of the silicon dioxide particles is 0.1-2 μm.

[0021] S3: coating acrylate glue on the quantum dot base film.

[0022] S4: Perform electron beam treatment on the quantum dot base film, and the recommended treatment time is 0.5-5 seconds.

[0023] The silicon dioxide microspheres on the surface of the quantum dot base film of the present invention can effectively generate total internal reflection of light, thereby improving the photoluminescence efficiency of the quantum dot film. At the same time, the surface coverage of silicon dioxid...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

A manufacturing method of a photo-induced enhanced quantum dot film comprises the following steps of: S1, providing a quantum dot base film, the quantum dot base film being an acrylic resin film containing quantum dots; S2, coating the quantum dot base film with a micron-sized silicon dioxide particle layer; S3, coating the quantum dot base film with acrylate glue; and S4, carrying out electron beam treatment on the quantum dot base film. The silicon dioxide microspheres dispersed on the surface of the base film can effectively generate total internal reflection, so that the photoluminescenceefficiency of the quantum dot base film is improved. Meanwhile, the quantum dot film has excellent water and oxygen isolation and wear resistance performances.

Description

technical field [0001] The invention relates to a method for making a photoinduced quantum dot film. Background technique [0002] Semiconductor nanocrystals with quantum confinement characteristics, also known as quantum dots, have unique optical and electrical properties due to their quantum size effects, such as continuously adjustable emission wavelengths, wide excitation spectra, narrow emission spectra, high Fluorescence quantum yield and photochemical stability, as well as anti-fluorescence bleaching, make it widely used in light-emitting diodes (LEDs), biological detection, lasers, and solar cell sensitizers, and significant research progress has been made in recent years. [0003] Quantum dot displays are devices that use quantum dot films as part of the panel architecture to generate monochromatic light to provide tunable primary colors and improve screen efficiency and performance. This can be achieved in two basic ways: photoluminescence and electroluminescence....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02B82Y20/00B82Y30/00B82Y40/00
CPCC09K11/02B82Y20/00B82Y30/00B82Y40/00
Inventor 罗培栋缪燃王立超
Owner NINGBO DXC NEW MATERIAL TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com