Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of Ga-Ti doped ZnO block thermoelectric material

A thermoelectric material and block technology, which is applied in the manufacture/processing of thermoelectric devices, and the material of the junction lead wires of thermoelectric devices. The effect of improving electrical and thermoelectric performance

Active Publication Date: 2021-01-12
XIAN UNIV OF TECH
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing Ga-Ti-doped ZnO bulk thermoelectric materials, which solves the problem that existing materials cannot meet the order of magnitude requirements for power factor in device applications

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of Ga-Ti doped ZnO block thermoelectric material
  • Preparation method of Ga-Ti doped ZnO block thermoelectric material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Step 1, according to the molecular formula Zn 0.998 Ga 0.002 O Weigh 9.978g of ZnO and 0.022g of Ga according to the ratio 2 o 3 Powder, utilizing ethanol to carry out wet ball milling, the mass ratio of ball to material is 5:1, and the ball milling time is 8h to obtain mixed powder;

[0034] Step 2, the mixed powder in step 1 is placed in 100 and 200 mesh sieves and sieved twice, and the powder between 100-200 mesh is taken and dried for later use;

[0035] Step 3, take the mixed powder in step 2, press the powder on a desktop press, the molding pressure is 5MPa, and the holding time is 30s; then further molding the green body in the vacuum system on the isostatic press, the molding pressure is 22MPa, The holding time is 5 minutes.

[0036] Step 4, sintering the green body formed in step 3 at 1200° C., holding the temperature for 10 minutes, and then cooling with the furnace to obtain a Ga-doped ZnO bulk thermoelectric material.

[0037] The density of the materia...

Embodiment 2

[0039] Step 1, according to the molecular formula Zn 0.998 Ti 0.002 O Weigh 9.942g of ZnO and 0.058g of TiO according to the ratio 2 Powder, utilizing ethanol to carry out wet ball milling, the mass ratio of ball to material is 5:1, and the ball milling time is 8h to obtain mixed powder;

[0040] Step 2, the mixed powder in step 1 is placed in 100 and 200 mesh sieves and sieved twice, and the powder between 100-200 mesh is taken and dried for later use;

[0041] Step 3, take the mixed powder in step 2, press the powder on a desktop press, the molding pressure is 5MPa, and the holding time is 30s; then further molding the green body in the vacuum system on the isostatic press, the molding pressure is 22MPa, The holding time is 5 minutes.

[0042] Step 4, sintering the green body formed in step 3 at 1200° C. for 10 h, and then cooling in the furnace to obtain a Ti-doped ZnO bulk thermoelectric material.

[0043] The density of the material obtained in Example 2 is 98.55%, an...

Embodiment 3

[0045] Step 1, according to the molecular formula Zn 0.99 Ti 0.01 O Weigh 9.893g of ZnO and 0.107g of TiO according to the ratio 2 Powder, utilizing ethanol to carry out wet ball milling, the mass ratio of ball to material is 5:1, and the ball milling time is 8h to obtain mixed powder;

[0046] Step 2, the mixed powder in step 1 is placed in 100 and 200 mesh sieves and sieved twice, and the powder between 100-200 mesh is taken and dried for later use;

[0047] Step 3, take the mixed powder in step 2, press the powder on a desktop press, the molding pressure is 5MPa, and the holding time is 30s; then further molding the green body in the vacuum system on the isostatic press, the molding pressure is 22MPa, The holding time is 5 minutes.

[0048] Step 4, sintering the green body formed in step 3 at 1200° C. for 10 h, and then cooling in the furnace to obtain a Ga-Ti doped ZnO bulk thermoelectric material.

[0049] The density of the material obtained in Example 3 is 99.16%, a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a Ga-Ti-doped ZnO block thermoelectric material, which comprises the following specific steps: firstly, weighing ZnO, Ga2O3 and TiO2 powder in proportion, and carrying out ball milling to obtain mixed powder; sieving the mixed powder, and carrying out isostatic pressing molding on the obtained powder; and finally, carrying out solid-phase sintering on the molded green body, and carrying out furnace cooling after sintering to obtain the GaTi-doped ZnO block thermoelectric material. The process is easy to operate, the prepared thermoelectric material is high in density, the requirements for material power factors in device application are met, and a simple, convenient and efficient method is provided for preparation of the ZnO-doped thermoelectric material.

Description

technical field [0001] The invention belongs to the technical field of energy materials, and in particular relates to a method for preparing Ga-Ti doped ZnO bulk thermoelectric materials. Background technique [0002] With the rapid development of industrialization, energy and environmental issues have become one of the important issues of human society. Thermoelectric materials are functional materials that can directly realize the mutual conversion of heat energy and electric energy. They have broad application prospects in the fields of national defense, aerospace, and microelectronics, especially in thermoelectric power generation and thermoelectric refrigeration. [0003] ZnO thermoelectric material is a kind of high-temperature thermoelectric material. Compared with traditional high-performance thermoelectric materials bismuth telluride and lead telluride, it has the advantages of cheap and easy-to-obtain raw materials, low toxicity, and good high-temperature stability...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/22C04B35/453C04B35/622C04B35/626H10N10/01H10N10/855
CPCC04B35/453C04B35/622C04B35/62605C04B35/6261C04B2235/3284C04B2235/3286C04B2235/656C04B2235/6567C04B2235/6565H10N10/855H10N10/01
Inventor 杨卿牛瑞张小红孙少东邹军涛梁淑华
Owner XIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com