Crystal pulling method, single crystal furnace and computer readable storage medium

Abstract

The invention provides a crystal pulling method, a single crystal furnace and a computer readable storage medium, and relates to the technical field of solar photovoltaics. The method comprises the steps that loading an initial raw material into a crucible, wherein the distance between the initial raw material and the upper edge of the crucible is made to be smaller than or equal to a first presetdistance; forming an initial melt: providing a main heater opposite to the side wall of the crucible and an auxiliary heater opposite to the bottom wall of the crucible, heating at a first power by using the main heater, heating at a second power by using the auxiliary heater, the first power being smaller than the second power, and enabling the initial raw material in the crucible to form an initial melt; and pulling the single crystal: in the isodiametric process of pulling the single crystal, adding an additional raw material into the crucible according to the weight of the pulled single crystal. The side wall of the crucible which does not contain the initial raw materials is prevented from being deformed by dry baking, the deformation of the side wall of the crucible caused by overhigh heating power of the main heater is avoided, the temperature fluctuation is small, and crystal pulling is facilitated.

Description

technical field [0001] The invention relates to the field of solar photovoltaic technology, in particular to a crystal pulling method, a single crystal furnace, and a computer-readable storage medium. Background technique [0002] Monocrystalline silicon is the main raw material for making solar cells, and the current commonly used production process is the Czochralski method. The main process of the Czochralski method is: put raw materials into the crucible, melt the raw materials to obtain a melt, immerse the seed crystal in the melt, slowly lift the seed crystal upward while rotating the seed crystal, and go through seeding, shouldering and shoulder turning. , equal diameter and finishing process to obtain a single crystal silicon rod. [0003] In the Czochralski method, the melting time of raw materials accounts for about 30% of the entire process. The continuous crystal pulling process is mainly to replenish raw materials into the crucible while pulling the single crys...

AI Technical Summary

Problems solved by technology

[0004] However, the continuous crystal pulling process requires continuous heating of the crucible, causing serious deformation of the crucible, which is not conducive to long-term crystal pulling; moreover, if the raw materials are added to the crucible while pulling the single crystal, if the process parameters are not properly controlled, it is easy to cause difficulty in crystal formation. , it is difficult to guarantee the yield

Images