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Infrared MEMS bridge column structure and process method

A process method and technology of bridge columns, applied in the direction of microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of bridge columns not being etched clean, and achieve easy removal, prevention of oxidation, and prevention of residues Effect

Pending Publication Date: 2020-12-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0016] The technical problem to be solved by the present invention is to provide an infrared MEMS bridge column structure and forming method, optimize the film layer structure, and solve the problem of unclean etching during the formation of bridge columns

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  • Infrared MEMS bridge column structure and process method
  • Infrared MEMS bridge column structure and process method
  • Infrared MEMS bridge column structure and process method

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Embodiment Construction

[0048] The infrared MEMS bridge column structure of the present invention mainly improves the film layer of the bridge column of the MEMS structure. Such as figure 1 As shown in , the figure is a cross-sectional view of an infrared MEMS structure, including a support hole structure, a bridge column structure, and a film layer structure outside the bridge column area. The support holes are located at both ends, and the MEMS is between the two support holes. structure, figure 1The dotted circle in is the bridge column structure area of ​​the infrared MEMS structure. A traditional bridge column film layer includes a first release protection layer, a metal dielectric layer, and a second release protection layer. The metal dielectric layer includes TiN and Ti layers. In the traditional process, in the process of etching the film layer to form bridge columns, when removing the photoresist and etching the DARC layer, TiN The resistance of the Ti layer to the etched oxygen ions is ...

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Abstract

The invention discloses an infrared MEMS bridge column structure and a forming method, and the structure employs a multilayer film composite structure which comprises a first release protection layer,a metal dielectric layer, and a second release protection layer. The first release protection layer is a silicon oxide layer; the second release protection layer is of a four-layer structure and sequentially comprises a silicon oxynitride and silicon oxide mixed layer, a silicon oxide layer, a silicon oxynitride layer and a silicon oxide layer from bottom to top; and the metal dielectric layer comprises three layers of structures, namely a Ti layer, a TiN layer and a Ti layer in sequence from bottom to top. According to the method, the metal Ti layer is added to the thin film layer when the metal dielectric layer is deposited, when the DARC is etched, the metal Ti layer can effectively prevent the TiN layer from being oxidized due to bombardment of oxygen ions during etching photoresist removal, subsequent wet etching is easier to remove completely, and residues are prevented.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a bridge structure of MEMS products, which can effectively support the MEMS hollow infrared MEMS bridge column structure, and can effectively reduce subsequent packaging abnormalities caused by the warping of the bridge structure. [0002] The invention also relates to a process method of the infrared MEMS bridge column structure. Background technique [0003] Micro-Electro-Mechanical Systems (MEMS, Micro-Electro-Mechanical System), also known as micro-electro-mechanical systems, micro-systems, micro-machines, etc., refer to high-tech devices with a size of a few millimeters or even smaller, and their internal structures are generally in microns or even nanometers. level, is an independent intelligent system. It is mainly composed of three parts: sensors, actuators (actuators) and micro energy sources. MEMS involves various disciplines and engineering technolog...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/00B81B7/02B81C1/00
CPCB81B7/0009B81B7/0025B81B7/02B81C1/00523B81C1/00531B81C1/00539
Inventor 刘善善朱黎敏
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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