Base, device and method for epitaxial growth of silicon wafer
A technology for epitaxial growth and silicon wafers, which is applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., and can solve problems such as uneven epitaxial layer thickness and poor flatness of epitaxial silicon wafers
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[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.
[0034] see image 3 , which shows a schematic diagram of an existing device 1 for epitaxial growth of a silicon wafer W. like image 3As shown, the device 1 may include: a base 10, which is used to carry a silicon wafer W; a base support frame 20, which is used to support the base 10 and drive the base during epitaxial growth. 10 rotates around the central axis X at a certain speed, wherein during the rotation of the base 10, the silicon wafer W rotates around the central axis X together with the base 10, that is to say, the silicon wafer W remains stationary relative to the base 10, Thus, a small gap G is required between the radial edge of the susceptor 10 and the adjacent part 10A (typically the preheating ring); the upper quartz bell 30A and the lower quartz bell 30B, th...
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