Non-contact film water-oxygen permeability testing device and production process thereof

Abstract

The invention provides a non-contact film water-oxygen permeability testing device and a production process thereof. The testing device comprises an Al2O3 substrate and the method comprises the following steps: an undoped u-GaN buffer layer is grown on an Al2O3 substrate; a Si-doped n-GaN epitaxial layer is grown on the u-GaN buffer layer, and the thickness of the Si-doped n-GaN epitaxial layer issmaller than that of the u-GaN buffer layer; an In0.2Ga0.8N / GaN multi-quantum well layer is grown on the n-GaN epitaxial layer; the In0. 2Ga0. 8N / GaN multi-quantum well layer is sequentially evaporated with an organic red light material layer and a hole transport layer, the hole transport layer is provided with an electrode, and the invention provides a high-precision non-contact thin film water-oxygen permeability testing device and a production process thereof.

Description

technical field [0001] The invention relates to the technical field of water and oxygen detection equipment, in particular to a non-contact thin film water and oxygen permeability test device and a production process thereof. Background technique [0002] Infrared sensor water vapor transmission rate method test principle, the prepared sample is clamped in the test chamber, nitrogen with a certain relative humidity flows on one side of the film, and dry nitrogen flows on the other side of the film; driven by the humidity gradient , water vapor will diffuse from the high-humidity side through the film to the low-humidity side; on the low-humidity side, the permeated water vapor is sent to the infrared sensor by the flowing dry nitrogen, and an electrical signal of the same proportion will be generated when it enters the sensor. Signal analysis and calculation, so as to obtain the water vapor transmission rate and other parameters of the sample, but the minimum range of WVTR t...

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Problems solved by technology

[0002] Infrared sensor water vapor transmission rate method test principle, the prepared sample is clamped in the test chamber, nitrogen with a certain relative humidity flows on one side of the film, and dry nitrogen flows on the other side of the film; driven by the humidity gradient , water vapor will diffuse from the high-humidity side through the film to the low-humidity side; on the low-humidity side, the permeated water vapor is sent to the infrared sensor by the flowing dry nitrogen, and an electrical signal of the same proportion will be generated when entering the sensor. Signal analysis and calculation, so as to obtain the water vapor transmission rate and other parameters of the sample, but the minimum range of WVTR tested by this method is only 10-2-10-3g / m2 / 24h. For OLED devices, the water vapor transmission rate The rate determines its life to a large extent, and the measurement method with higher accuracy is extremely important. Generally, it needs to reach 10-6g / m2 / 24h. The above-mentioned infrared sensor cannot meet the requirements of OLED device testing, so a more accurate WVTR is required. Test method to detect the effect of thin film encapsulation

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