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A kind of dynamic frequency selective surface structure and preparation method thereof

A technology of frequency selective surface and dynamic frequency selection, which is applied in the electromagnetic field, can solve problems such as deterioration of the performance of integrated circuit components, and achieve the effects of avoiding overheating of the dielectric substrate and deformation of the unit structure, avoiding energy loss, and avoiding weight increase

Active Publication Date: 2022-08-02
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For the problems existing in the above passive PFSS structure and active AFSS structure, the object of the present invention is to provide a dynamic frequency selective surface structure and a preparation method thereof, wherein the unit structure composition of the dynamic frequency selective surface and their arrangement, connection Improve the relationship, etc., and use the conductive performance adjustment component to realize the change of the equivalent frequency selective surface unit structure or the series / parallel conversion of the array by changing the ambient temperature, incident light intensity, gas composition or the magnetic induction intensity of the external magnetic field. Compared with the existing technology Compared with solving the performance degradation problem caused by the use of integrated circuit components on the active frequency selective surface, it can effectively realize the dynamic change of the selective transmission frequency, and the preparation method of the dynamic frequency selective surface structure is simple, which can avoid the use of welding

Method used

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  • A kind of dynamic frequency selective surface structure and preparation method thereof
  • A kind of dynamic frequency selective surface structure and preparation method thereof
  • A kind of dynamic frequency selective surface structure and preparation method thereof

Examples

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example 1

[0059] A sample F4B-2 dielectric substrate with a size of 500mm×500mm, a thickness of 0.5mm, a relative permittivity ε=2.65 and a copper film with a thickness of 0.03mm was selected, and the laser selective etching technology was used on the sample. Selectively remove the copper film material, and prepare a gap ring-shaped unit structure with an outer ring radius of 2.3 mm, an inner ring radius of 1.9 mm, and a period (that is, the distance between the center of the adjacent unit and the center) of 5 mm. A bandpass FSS periodic array with a fixed resonant frequency. Then, using laser-induced forward transfer technology (LIFT), the undoped ionic VO deposited on the lower surface of the glass substrate 2 The film is transferred with high precision to the outer wall of the inner ring of the gap annular unit structure, and is in close contact with the copper film of the inner ring, VO 2 The film has a width of 0.2 mm and a thickness of 0.03 mm, and is prepared into a composite un...

example 2

[0061] A sample F4B-2 dielectric substrate with a size of 500mm×500mm, a thickness of 0.5mm, a relative permittivity ε=2.65 and a copper film with a thickness of 0.03mm was selected, and the laser selective etching technology was used on the sample. Selectively remove the copper film material, and prepare a ring-shaped unit structure of copper sheets with an outer ring radius of 2.3 mm, an inner ring radius of 1.9 mm, and a period of 5 mm, forming a band-stop FSS periodic array with a fixed resonant frequency . Then, using laser-induced forward transfer technology (LIFT), the undoped ionic VO deposited on the lower surface of the glass substrate 2 The film is transferred to the outer wall of the inner ring of the ring-shaped unit structure of the copper sheet with high precision, and is in close contact with the copper film of the inner ring, VO 2 The film has a width of 0.3 mm and a thickness of 0.03 mm, and is prepared into a composite unit structure. When the ambient temp...

example 3

[0063] A sample F4B-2 dielectric substrate with a size of 500mm×500mm, a thickness of 0.5mm, a relative permittivity ε=2.65 and a copper film with a thickness of 0.03mm was selected, and the laser selective etching technology was used on the sample. Selectively remove the copper film material, and prepare a slot ring-shaped unit structure with an outer ring radius of 2.3mm, an inner ring radius of 1.9mm, and a period of 5mm, forming a band-pass FSS periodic array with a fixed resonant frequency. Then, laser-induced forward transfer (LIFT) was used to transfer the doped 10% Mo ion VO deposited on the lower surface of the glass substrate. 2 The film (phase transition temperature is 308K) is transferred to the outer wall of the inner ring of the gap annular unit structure with high precision, and is in close contact with the inner ring copper film, doped with Mo ions VO 2 The width of the film is 0.1mm and the thickness is 0.03mm; then the laser-induced forward transfer technolog...

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Abstract

The invention belongs to the field of electromagnetic technology, and discloses a dynamic frequency selective surface structure and a preparation method thereof. The structure consists of a passive frequency selective surface substrate and a conductive performance adjusting component located on the substrate, wherein the conductive performance adjusting component is located at a single passive frequency Inside a surface element structure, or for connecting two adjacent passive frequency selective surface elements. The conductive performance-adjusting component will change between conductor and insulator under the action of changing environmental conditions such as temperature or light intensity, so that the unit structure of the frequency selective surface conductive element will change dynamically. The present invention can effectively solve the problem of performance deterioration caused by the use of integrated circuit components on the active frequency selective surface by improving the unit structure composition of the dynamic frequency selective surface, their setting methods, connection relationships, etc., thereby effectively realizing selective transmission. Dynamic variation of overfrequency.

Description

technical field [0001] The invention belongs to the field of electromagnetic technology, and more particularly, relates to a dynamic frequency selective surface structure and a preparation method thereof. Background technique [0002] How to reduce the radar cross section (RCS) of the target in the development of radar stealth technology, stealth radome, multi-band antenna reflector, wireless communication system, antenna pattern control, building electromagnetic control or enhanced optoelectronic devices and other various It plays a vital role in the field of electromagnetic wave regulation. In recent years, although many new structural absorbing materials have been proposed, the frequency selective surface (FSS) absorbing body has many advantages due to its design flexibility, wide adaptability to frequency bands, broadband performance, and online tunable performance. , received attention from all sides. The structure of the frequency selective surface FSS is to prepare ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/35C23C14/02C23C16/40C23C16/02
CPCC23C14/083C23C14/35C23C14/022C23C16/405C23C16/0227
Inventor 邓磊敏段军杨少睿熊伟盘亚楠
Owner HUAZHONG UNIV OF SCI & TECH
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