Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Electronic power switch drive module

A switching driver and electronic power technology, which is applied in the direction of electronic switch, output power conversion device, AC power input conversion to DC power output, etc. It can solve the problems of energy consumption, heat and electricity compensation, poor frequency response of resistor shunts, etc.

Pending Publication Date: 2020-11-03
LEM INT SA
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, measuring the shunt resistance according to the output voltage range will result in energy dissipation and possible thermoelectric compensation
Resistive shunts may also have poor frequency response due to parasitic mutual inductance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electronic power switch drive module
  • Electronic power switch drive module
  • Electronic power switch drive module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] Referring to these figures, a power semiconductor unit 1 comprises a power semiconductor module 3 and an electronic power switch driver module 2 mounted and connected to the power semiconductor module.

[0045] The power semiconductor module 3 may for example be in the form of an insulated gate bipolar transistor (IGBT) half-bridge module, comprising a power input 5 and a power output 7 . The power input 5 may comprise input DC (direct current) terminals 5a-, 5a+ for connection to positive and negative conductors of a DC power supply. The power output 7 comprises at least one output terminal 7a for at least one phase of the alternating voltage current. The waveform of the output current can have frequency and amplitude of various shapes depending on the intended application of the power semiconductor unit. Power semiconductor units can be used, for example, in inverters for motor drives, in inverters for grid-connected photovoltaic power plants, in frequency converters...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An electronic power switch drive module (2) for a power semiconductor unit (1), comprising a gate drive (6) and a current transducer (8) mounted on one or more circuit boards (4), the gate drive comprising at least one circuit portion (20) for controlling at least one transistor (13a) of a power semiconductor module (3) of said power semiconductor unit (1), the current transducer (8) configured tobe coupled to an output (7) of the power semiconductor module (3) for measuring an output current of the power semiconductor module, said at least one circuit portion (20) connected to an output potential of the output current to be measured. The current transducer comprises at least one magnetic field sensor (16a, 16a', 16b), the current transducer being connected to said at least one circuit portion of the gate drive at said output potential in a non-isolated manner.

Description

technical field [0001] The invention relates to a power semiconductor unit and an electronic power switch driver module therefor. Background technique [0002] In power electronics, electronic switches are used to make and break electrical connections in circuit arrangements such as half-bridges, anti-parallel or series switches, or simply to connect loads to power sources, e.g. The megahertz frequency range is switched periodically. Electronic switches for power semiconductor units include IGBTs (Insulated Gate Bipolar Transistors), FETs (Field Effect Transistors), MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and can be arranged in devices such as half-bridge, three-level, matrix and Various known semiconductor switches in topologies such as other such semiconductor switch structures. [0003] For many power semiconductor units it is advantageous to have very fast switching in order to reduce the transition time between on and off states where losses can o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/082H03K17/90G01R15/18G01R15/20H02M7/00
CPCH03K17/0828H03K17/90H03K2217/0027G01R15/181G01R15/202G01R15/207H02M1/0009
Inventor D·施莱夫利S·特伦伯特
Owner LEM INT SA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com