Schottky diode and its preparation method

Abstract

The present disclosure relates to Schottky diodes and methods of making the same. A Schottky diode includes: a substrate layer; a first structure and a second structure located on the substrate layer, wherein an isolation trench structure is between the first structure and the second structure, and the first structure includes a first body region and a second structure from the first structure. a cantilever beam extending from a body region, the second structure includes a second body region, and the second body region includes a heavily doped layer on the substrate layer and a lightly doped layer on the heavily doped layer; and a Schottky contact structure, the Schottky contact structure includes: a contact metal layer located on the lightly doped layer and connected to the end of the cantilever beam; and a passivation layer located on the lightly doped layer and surrounding the contact metal layer, wherein the heavily doped The position corresponding to the contact metal layer in the heterogeneous layer has one or more regions, and the one or more regions are in contact with the lightly doped layer and form a depletion region at the contact interface with the corresponding region of the lightly doped layer.

Description

technical field [0001] The invention relates to the technical field of diodes, in particular to a Schottky diode and a preparation method thereof. Background technique [0002] Terahertz waves refer to electromagnetic waves with frequencies in the range of 100GHz-10THz, which overlap with high-end millimeter waves, submillimeter waves and far-infrared waves, and are in the transitional field from macro electronics to micro photonics. In the low-end range of terahertz frequencies, solid-state sources are usually obtained by multiplying millimeter waves to the terahertz frequency band through nonlinear semiconductor devices. [0003] The use of Schottky diode devices to achieve high-efficiency frequency doubling has many advantages. At the same time, Schottky diode devices can work stably in the entire millimeter-wave and submillimeter-wave frequency bands from 30GHz to 3000GHz. Therefore, Schottky diode high-efficiency frequency doubling technology is very suitable for high-p...

AI Technical Summary

Problems solved by technology

For traditional Schottky diodes, the current has a strong congestion effect when passing through the Schottky junction, causing the resistance to increase, dissipating the input power, reducing the power capacity of the Schottky diode, and thus affecting its frequency doubling efficiency

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