Schottky diode and its preparation method

A Schottky diode and Schottky contact technology, applied in the field of diodes, can solve the problems of dissipating input power, resistance increase, congestion effect, etc., and achieve the effect of improving reverse bias breakdown voltage and increasing power capacity

Active Publication Date: 2020-12-11
NUCTECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For traditional Schottky diodes, the current has a strong congestion effect when passing through the Schottky junction, causing the resistance to increase, dissipating the input power, reducing the power capacity of the Schottky diode, and thus affecting its frequency doubling efficiency

Method used

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  • Schottky diode and its preparation method
  • Schottky diode and its preparation method
  • Schottky diode and its preparation method

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Embodiment Construction

[0019] The following detailed description of embodiments of the present disclosure contains numerous specific details in order to provide a thorough understanding of the present invention. However, it will be apparent to those skilled in the art that embodiments of the present disclosure may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a clearer understanding of the present invention by illustrating examples of the invention. The present invention is in no way limited to any specific configurations and method steps set forth below, but covers any modifications, substitutions and improvements in the relevant elements, components and method steps without departing from the teachings of the present invention.

[0020] The power capacity output of the frequency doubler can be improved by increasing the number of Schottky diodes or increasing the Schottky junction area. However, increasing the number...

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Abstract

The present disclosure relates to Schottky diodes and methods of making the same. A Schottky diode includes: a substrate layer; a first structure and a second structure located on the substrate layer, wherein an isolation trench structure is between the first structure and the second structure, and the first structure includes a first body region and a second structure from the first structure. a cantilever beam extending from a body region, the second structure includes a second body region, and the second body region includes a heavily doped layer on the substrate layer and a lightly doped layer on the heavily doped layer; and a Schottky contact structure, the Schottky contact structure includes: a contact metal layer located on the lightly doped layer and connected to the end of the cantilever beam; and a passivation layer located on the lightly doped layer and surrounding the contact metal layer, wherein the heavily doped The position corresponding to the contact metal layer in the heterogeneous layer has one or more regions, and the one or more regions are in contact with the lightly doped layer and form a depletion region at the contact interface with the corresponding region of the lightly doped layer.

Description

technical field [0001] The invention relates to the technical field of diodes, in particular to a Schottky diode and a preparation method thereof. Background technique [0002] Terahertz waves refer to electromagnetic waves with frequencies in the range of 100GHz-10THz, which overlap with high-end millimeter waves, submillimeter waves and far-infrared waves, and are in the transitional field from macro electronics to micro photonics. In the low-end range of terahertz frequencies, solid-state sources are usually obtained by multiplying millimeter waves to the terahertz frequency band through nonlinear semiconductor devices. [0003] The use of Schottky diode devices to achieve high-efficiency frequency doubling has many advantages. At the same time, Schottky diode devices can work stably in the entire millimeter-wave and submillimeter-wave frequency bands from 30GHz to 3000GHz. Therefore, Schottky diode high-efficiency frequency doubling technology is very suitable for high-p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872H01L21/329H01L29/06
CPCH01L29/0615H01L29/0684H01L29/66212H01L29/872
Inventor 赵自然胡海帆马旭明肖雄
Owner NUCTECH CO LTD
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