Double-layer substrate wiring terminal structure of low-inductance power module

A power module and connection terminal technology, which is applied in the field of low inductance power module double-layer substrate connection terminal structure, can solve the problems of increasing design difficulty and increasing product cost, etc.

Pending Publication Date: 2020-10-23
ZHENGHAI GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these two methods require additional circuit design and drive, which not only increases the design difficulty, but also increases ...

Method used

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  • Double-layer substrate wiring terminal structure of low-inductance power module
  • Double-layer substrate wiring terminal structure of low-inductance power module
  • Double-layer substrate wiring terminal structure of low-inductance power module

Examples

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Embodiment Construction

[0027] Example Figure 2 to Figure 5 As shown, the low inductance power module double-layer substrate connection terminal structure of the present invention includes a first connection terminal 1, a second connection terminal 2 and at least one double-layer power module substrate 3, and the first connection terminal 1 and the second connection terminal Some areas of the terminal 2 are overlapped at intervals up and down and form the connection ends 11 and 12 at the front end. parts 13 and 23, the double-layer power module substrate 3 includes a first substrate connection region 31 and a second substrate connection region 32, the connection part 13 of the first connection terminal 1 is connected to the first substrate The area 31 is integrally connected, and the connection portion 23 of the second connection terminal 2 is integrally connected with the second substrate connection area 32 .

[0028] Preferably, the extension portion 12 of the first connection terminal 1 and the ...

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PUM

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Abstract

The invention discloses a substrate wiring terminal structure of a low-inductance power module. The structure comprises a first connecting terminal, a second connecting terminal and at least one double-layer power module substrate, part areas of the first connecting terminal and the second connecting terminal are arranged in a vertically spaced and overlapped manner, and a wiring end part is formed at the front end part. The tail end parts of the first connecting terminal and the second connecting terminal are sequentially provided with an extension part and a connecting part; the double-layerpower module substrate comprises a first substrate connecting area and a second substrate connecting area, the connecting part of the first connecting terminal and the first substrate connecting areaare connected into a whole, and the connecting part of the second connecting terminal and the second substrate connecting area are connected into a whole. The structure reduces the inductance of a system loop, effectively reduces the voltage peak at the moment when the IGBT module is turned off, reduces the switching loss, avoids electromagnetic interference, and guarantees the performance of a three-phase inversion driving system.

Description

technical field [0001] The invention relates to the technical field of three-phase inverter driving, in particular to a double-layer substrate connection terminal structure of a low-inductance power module. Background technique [0002] In a three-phase inverter drive system, due to the stray inductance of components and DC busbars, large voltage and current spikes will be generated during the turn-on and turn-off of the IGBT module, especially the voltage spike at the moment the IGBT module is turned off is very large , which increases the switching loss, generates strong electromagnetic interference, and even causes damage to the IGBT module. In order to eliminate the voltage overshoot problem caused by stray parameters, traditional solutions include the design of snubber circuits, soft switching technology, etc.; snubber circuits reduce the impact voltage by absorbing the energy released instantaneously by stray inductance, and soft switching technology The di / dt is main...

Claims

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Application Information

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IPC IPC(8): H01L23/49H01L23/48
CPCH01L23/481H01L23/49
Inventor 茆中良乐志斌张永亮
Owner ZHENGHAI GRP CO LTD
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