Voltage accumulation in-memory calculation circuit based on SRAM bit line XNOR

Abstract

The invention relates to a voltage accumulation in-memory calculation circuit based on SRAM bit line XNOR. The voltage accumulation in-memory calculation circuit is characterized in that a read word line driver module in an XNOR mode is connected with a storage operation unit through a read word line; the row decoder module in the storage mode is connected with a storage arithmetic unit through awriting line; the write bit line driving and column decoding module in the storage mode is connected with the storage arithmetic unit through a write bit line; the read bit line in each storage arithmetic unit is directly connected with one analog-to-digital converter; and analog accumulation is carried out on bitwise ternary XNOR gate results of each read bit line voltage in the storage array module, and the analog-to-digital converter is used for digitally outputting the read bit line voltage. The circuit can shorten the propagation time of the output voltage.

Description

technical field [0001] The invention relates to the field of voltage accumulation in-memory calculation, in particular to a voltage accumulation in-memory calculation circuit based on the exclusive OR of SRAM bit lines. Background technique [0002] Deep neural networks (DNNs) and convolutional neural networks (CNNs) have achieved unprecedented improvements in the accuracy of large-scale recognition tasks. However, algorithmic complexity and memory access limit the energy efficiency and acceleration speed of DNN hardware. To solve this problem, in recent algorithms, weights and neuron activations are binarized to +1 or -1, so that the multiplication between weights and input activations becomes NOR gate XNOR operations, and the accumulation of XNOR operations becomes these XNOR results the number of bits. [0003] However, the reduced operational complexity of binary and ternary algorithms makes row-by-row memory accesses dominate the speed and energy efficiency of DNN har...

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a voltage accumulation memory calculation circuit based on SRAM bit line exclusive OR, to solve the problem of long transmission time and long time spent on data output path in the selection decoding process

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