Polishing device and polishing assembly

Abstract

The invention provides a polishing device and a polishing assembly. The polishing device is used for polishing a wafer. The polishing device comprises a rotary plate capable of rotating, a polishing pad with a polishing surface, and a sprayer on the upper side of the polishing pad, wherein the polishing pad is arranged on the rotary plate, and the sprayer is used for spraying a polishing solutionto the polishing surface. The polishing surface is divided into a plurality of polishing areas, and solution discharging holes are formed in the polishing areas respectively and used for discharging the polishing solution in the polishing areas. The polishing device further comprises control valves for controlling whether the polishing solution is discharged from the solution discharging holes ornot respectively. By dividing the polishing surface into the polishing areas, forming the solution discharging holes in the polishing areas respectively and arranging the control valves for controlling whether the polishing solution is discharged from the solution discharging holes or not, the amount of the polishing solution at different positions of the wafer is easily controlled. In use, for the high-polishing area on the wafer, a certain amount of the polishing solution on the corresponding polishing area can be correspondingly discharged, and accordingly, the wafer is prevented from beingover polished to control the uniformity of film-forming patterns on the wafer.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a polishing device and a polishing component. Background technique [0002] With the gradual refinement of semiconductor devices (Device), the process of polishing the surface of the wafer (wafer) by the CMP (Chemical Mechanical Polishing) process is increasing, which can reduce the edge of the film-forming pattern on the wafer. altitude difference. Therefore, in the CMP process, the thickness distribution of the film pattern on the wafer becomes more important. After the CMP process, due to the existence of oxidation residues (Oxide Residue), poor interconnection structure composed of tungsten or copper, and CMP follow-up processes, etc., will affect the uniformity of the film formation pattern on the wafer, resulting in poor contact (ContactNot open), excessive polishing at the edge of the wafer, etc. Contents of the invention [0003] The invention pro...

AI Technical Summary

Problems solved by technology

After the CMP process, due to the existence of oxidation residues (Oxide Residue), poor interconnection structure composed of tungsten or copper, and CMP follow-up processes, etc., will affect the uniformity of the film formation pattern on the wafer, resulting in poor contact (ContactNot open), excessive polishing at the edge of the wafer, etc.

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