Etching equipment and etching method

Abstract

The invention provides etching equipment and an etching method. The etching equipment comprises a plasma generator, a flow homogenization disc, a baffle assembly and a wafer moving assembly, wherein the baffle assembly is arranged between a plasma generator and the flow homogenization disc in an openable and closable manner, when the baffle assembly is opened, a window is formed to expose one partof the flow homogenization disc so as to allow plasma to reach the flow homogenization disc through the window, and the wafer moving assembly is arranged below the flow homogenization disc and is used for bearing a to-be-etched wafer and driving the to-be-etched wafer to move, so that the to-be-etched region of the wafer passes through a region below the part, exposed by the window, of the flow homogenization disc according to a preset path and is etched by plasmas passing through the flow homogenization disc. According to the invention, the etching uniformity can be improved, the spare partcost and the equipment maintenance workload can be reduced to a certain extent, and the radio frequency power consumption is reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuits, and relates to an etching device and an etching method. Background technique [0002] The electrostatic chucks (E-Chuck) of dry etching (Dry Etch) equipment commonly used in the market are all fixed, and the plasma (Plasma) adopts a uniform flow covering type. The shortcoming of the current design is that the plasma covers the entire area of ​​the wafer after passing through the uniform flow plate, resulting in inconsistent uniformity, resulting in poor uniformity of process results, and manufacturers in the industry cannot greatly improve the impact of this unevenness on products. Impact. [0003] The area of ​​the full-coverage plasma uniform flow plate is slightly larger than the wafer size, and the uniformity of the physical size of the holes is difficult to control. When the plasma is injected into the uniform flow plate, it is columnar, and the cross-sectional area is abou...

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide an etching device and an etching method, which are used to solve the problem of low etching uniformity and low power consumption of the existing etching equipment and etching methods. High cost, spare parts cost and maintenance workload

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