Memory and method of forming the same
A memory and bit line technology, which is applied in the manufacture of semiconductor devices, electrical solid state devices, semiconductor/solid state devices, etc., can solve problems such as abnormal appearance and impact on memory performance, to ensure appearance, improve appearance accuracy, and improve device performance. performance effect
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Embodiment 2
[0152] The difference from the first embodiment is that, in this embodiment, a third contact portion and a fourth contact portion are further provided in the peripheral region. Figure 5 It is a schematic cross-sectional view of the memory in the second embodiment of the present invention, such as Figure 5 As shown, the third contact portion 430 includes an insulating pillar 430a and a third electrically conductive layer 430b, and the third electrically conductive layer 430b covers the top surface of the insulating pillar 430a. Also, the fourth contact portion 440 only includes insulating pillars.
[0153] Further, the fourth contact portions 440 and the third contact portions 430 are alternately arranged in sequence, and isolation is also filled between the insulating pillars 430a of the third contact portion 430 and the insulating pillars of the fourth contact portion 440 Material. In this embodiment, a fourth contact portion 440 is spaced between the third contact portio...
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