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Capacitively coupled plasma discharge device

A plasma and discharge device technology, applied in the field of plasma discharge devices, can solve the problems of poor plasma axial symmetry and achieve the effect of ensuring axial symmetry

Active Publication Date: 2020-08-25
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the commonly used laboratory parallel plate plasma source, due to the use of various diagnostic methods, the plasma will diffuse to the side wall of the grounded chamber, and the side wall also becomes a part of the ground electrode, resulting in the area of ​​the ground electrode being much larger than that of the driving electrode Area, forming a DC negative bias on the surface of the driving electrode, resulting in poor axial symmetry of the plasma, so it is difficult to compare with computer simulation results (most one-dimensional models can only simulate axially symmetric plasma structures)

Method used

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Embodiment Construction

[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0021] The purpose of the present invention is to provide a plasma vacuum discharge system and expand the adjustment range of self-bias voltage.

[0022] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0023] figure 1 It is a cross-sectional view of an embodiment of ...

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Abstract

The invention discloses a capacitively coupled plasma discharge device. The plasma discharge device comprises a vacuum chamber, an upper plate electrode, a lower plate electrode and insulating rings,wherein the upper plate electrode and the lower plate electrode are positioned in the vacuum chamber; the insulating rings are positioned between the upper plate electrode and the lower plate electrode and stacked layer by layer; a gap is formed between each insulating ring and the adjacent insulating ring; the uppermost insulating ring in the insulating rings stacked layer by layer is in contactwith the lower surface of the upper plate electrode, and the lowermost insulating ring is in contact with the upper surface of the lower plate electrode; the upper plate electrode is connected with afirst discharge driving rod, and the first discharge driving rod extends out of the vacuum chamber; and the lower plate electrode is connected with a second discharge driving rod, and the second discharge driving rod extends out of the vacuum chamber. By adopting the plasma discharge device, the axial symmetry of the plasma can be ensured in the experiment process.

Description

technical field [0001] The invention relates to the field of plasma discharge, in particular to a capacitive coupling plasma discharge device. Background technique [0002] Capacitively coupled plasma (CCP) sources are widely used in material etching and deposition industries due to their simple device and the ability to generate large-area, uniform plasma. The capacitively coupled (parallel plate electrode structure) plasma source used in industry is a closed system and cannot be diagnosed (increasing the diagnostic window will destroy the state of the plasma and affect the quality of material etching or deposition). In order to optimize the plasma etching or deposition process, it is necessary to conduct multi-faceted experimental diagnosis and computer simulation research on the plasma source. This requires a reasonable design of the plasma source in the laboratory. In addition, if one-dimensional computer simulation of the actual plasma source is to be performed, the p...

Claims

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Application Information

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IPC IPC(8): H05H1/46
CPCH05H1/46
Inventor 刘永新王祥宇苏子轩王友年
Owner DALIAN UNIV OF TECH
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