Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Efficient P-type solar cell and photovoltaic module

A solar cell, high-efficiency technology, applied in photovoltaic power generation, electrical components, circuits, etc., can solve the problem of incompatibility of the surface integrity of the emitter

Inactive Publication Date: 2020-08-25
上饶捷泰新能源科技有限公司
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a high-efficiency P-type solar cell and photovoltaic module to solve the problem that the excellent surface passivation effect and the surface integrity of the emitter cannot be combined in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Efficient P-type solar cell and photovoltaic module
  • Efficient P-type solar cell and photovoltaic module
  • Efficient P-type solar cell and photovoltaic module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0032] As a preferred implementation manner, the highly doped polysilicon layer 310 has a thickness ranging from 50 nanometers to 150 nanometers inclusive, such as any one of 50.0 nanometers, 100.2 nanometers or 150.0 nanometers.

[0033] In addition, the front passivation layer 320 and the back passivation layer 230 are silicon nitride layers, and the silicon nitride layer can simultaneously play anti-reflection and passivation functions, so that incident light can be better absorbed by solar cells. , improve power generation efficiency; furthermore, the thickness range of the front passivation layer 320 is 75 nanometers to 85 nanometers, such as any one of 75.0 nanometers, 80.0 nanometers or 85.0 nanometers, and the thickness range of the back passivation layer 230 is 70 nm to 90 nm, such as any of 70.0 nm, 80.0 nm or 90.0 nm, inclusive.

[0034] Also, the thickness of the N-type doped layer 220 is 50 nanometers to 150 nanometers inclusive, such as any one of 50.0 nanometers...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thickness rangeaaaaaaaaaa
Thicknessaaaaaaaaaa
Thickness rangeaaaaaaaaaa
Login to View More

Abstract

The invention discloses an efficient P-type solar cell. The efficient P-type solar cell comprises a light-facing surface epitaxial layer, P-type substrate silicon and a backlight surface epitaxial layer, wherein the light-facing surface epitaxial layer comprises a front passivation layer arranged in a non-metal region on the surface of the P-type substrate silicon, a highly doped polycrystalline silicon layer arranged in a metal region on the surface of the P-type substrate silicon, and a front surface electrode arranged on the surface of the highly doped polycrystalline silicon layer, whereinthe highly-doped polycrystalline silicon layer is a P-type semiconductor layer, and the doping concentration is higher than that of the P-type substrate silicon; the backlight surface epitaxial layercomprises a back tunneling oxide layer arranged on the surface of the P-type substrate silicon, an N-type doped layer arranged on the surface of the back tunneling oxide layer, a back surface electrode arranged on a metal region on the surface of the N-type doped layer, and a back surface passivation layer arranged on a non-metal region on the surface of the N-type doped layer. According to the invention, the surface passivation of the solar cell and the surface integrity of an emitter are both achieved. The invention also provides a photovoltaic module with the above advantages.

Description

technical field [0001] The invention relates to the field of photovoltaic new energy, in particular to a high-efficiency P-type solar cell and a photovoltaic module. Background technique [0002] High efficiency and low cost are the two most important directions of solar cell research. For crystalline silicon solar cells, with the improvement of crystalline silicon manufacturing technology, the bulk carrier lifetime of the substrate silicon wafer has been continuously improved, which is no longer a key factor restricting the improvement of cell efficiency. The passivation of the battery surface has more and more obvious influence on the conversion efficiency. In the production process of solar cells, the cost of substrate silicon wafers accounts for the highest proportion of the entire production cost. In order to reduce production costs, realize “grid parity” of photovoltaic electricity prices as soon as possible, and improve market competitiveness, the thinning of silicon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0216H01L31/0352H01L31/068
CPCH01L31/02167H01L31/035272H01L31/0682Y02E10/546
Inventor 钟潇白玉磐陈园付少剑
Owner 上饶捷泰新能源科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com