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MEMS palladium alloy probe testing method and probe loading method thereof

A test method, palladium alloy technology, applied in the measurement device, using stable bending force to test material strength, using stable tension/pressure test material strength and other directions, can solve the problem of heat dissipation, which is difficult to solve, narrow in field, and no discovery Palladium alloy probe test equipment and other issues

Active Publication Date: 2020-08-07
强一半导体(苏州)股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] However, no special testing equipment has been found for testing the properties of palladium alloy probes.
This situation is not only due to the new MEMS probe card technology and narrow field, it is difficult to have general-purpose equipment for direct application, but also it is difficult to manufacture special test equipment for testing the performance of palladium alloy probes. Due to the size of the MEMS probe card itself Tiny, the components are only millimeter level, so there are very strict requirements for the number of drive systems, if there are too many drive systems, not only cannot be arranged in a limited space, but also the problem of heat dissipation is difficult to solve

Method used

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  • MEMS palladium alloy probe testing method and probe loading method thereof
  • MEMS palladium alloy probe testing method and probe loading method thereof
  • MEMS palladium alloy probe testing method and probe loading method thereof

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specific Embodiment approach 1

[0103] The following is a specific embodiment of the MEMS palladium alloy probe testing device of the present invention.

[0104] The MEMS palladium alloy probe testing device under the present embodiment, the structure schematic diagram is as follows figure 1 shown. The MEMS palladium alloy probe testing device comprises a barrel-shaped housing 1, a disturbance structure 2 arranged on the inner wall of the barrel-shaped housing 1, an electromagnetic pole 3 arranged on the outer wall of the barrel-shaped housing 1, and arranged horizontally in the barrel-shaped housing 1 Placed reference test platform 4, a symmetrical bending test structure 5 positioned above the reference test platform 4, a sealing cover 6 arranged above the barrel-shaped housing 1 and a sensor 7 installed on the sealing cover 6, a sprayer 8, a heater 9 and fan 10;

[0105] The disturbance structure 2 includes a disturbance body 2-1 with a circular cross section, a roller 2-2 and a tooth structure 2-3 dispo...

specific Embodiment approach 2

[0112] The following is a specific embodiment of the MEMS palladium alloy probe testing device of the present invention.

[0113] The MEMS palladium alloy probe test device under the present embodiment, on the basis of the specific embodiment one, further defines that the benchmark test platform includes a main board 4-1 and a plurality of sliders 4-2, and the main board 4-1 is provided with There are gaps from both sides to the center of symmetry, the cross-sectional shape of the gap is "I" shape, a slider 4-2 is inserted in the gap, and a plurality of vertical shafts are equally spaced on the slider 4-2 A circular through hole in a straight direction, the through hole can be equipped with a lifting structure 5-9, such as image 3 Shown; The material of described main board 4-1 and slide block 4-2 is different, specifically as follows:

[0114] First, the speed at which the volume of the material of the main board 4-1 increases with the increase of temperature is lower than ...

specific Embodiment approach 3

[0120] The following is a specific implementation of the benchmark test platform in the MEMS palladium alloy probe test device of the present invention.

[0121] The benchmark test platform under the present embodiment includes a main board 4-1 and a plurality of sliders 4-2, the main board 4-1 is provided with a gap from both sides to the symmetrical center direction, and the cross-sectional shape of the gap is "I" shape, a slider 4-2 is inserted in the gap, and a plurality of circular through holes in the vertical direction are equally spaced on the slider 4-2, and the through holes can be installed with a lifting structure 5- 9, such as image 3 Shown; The material of described main board 4-1 and slide block 4-2 is different, specifically as follows:

[0122] First, the speed at which the volume of the material of the main board 4-1 increases with the increase of temperature is lower than that of the material of the slider 4-2 with the increase of temperature. Before testi...

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Abstract

The invention discloses an MEMS palladium alloy probe testing method and a probe loading method thereof, belongs to the field of IC manufacturing industry, and particularly relates to a device and method for testing the performance of a palladium alloy probe in an MEMS probe card and a related key technology. The method comprises the following steps of firstly, loading a to-be-tested probe, including a to-be-tested probe loading method for testing the tensile property and a to-be-tested probe loading method for testing the bending property; then setting the test temperature and humidity, namely through the sensor monitoring and the cooperation of a sprayer, a heater and a fan, adjusting the temperature and humidity, wherein in the adjustment process, a disturbance main body rotates under the action of an electromagnetic pole to ensure that the temperature and the humidity in a test environment are uniform; and finally testing. The tensile property and bending property of the to-be-tested probes with different parameters can be tested by only needing the symmetrical bending test structure to work. According to the method, the tensile property and the bending property of the probe onthe MEMS probe card can be tested.

Description

technical field [0001] The invention discloses a MEMS palladium alloy probe testing method and a probe loading method thereof, which belong to the field of IC manufacturing industry, and specifically relate to a device, method and related key technologies for performance testing of palladium alloy probes in MEMS probe cards. Background technique [0002] The probe card is a very important technology in the chip manufacturing process. Before the chip is packaged, the probes on the probe card directly contact the pads or bumps on the chip to lead out the chip signal, and then cooperate with peripheral testing instruments and Software control realizes automatic measurement, and then screens out defective products to ensure product yield. [0003] With the development of micro-electromechanical system (MEMS) technology, the size of the chip is getting smaller and smaller, reaching the order of millimeters, and the degree of integration inside the chip is getting higher and highe...

Claims

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Application Information

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IPC IPC(8): G01N3/02G01N3/08G01N3/20
CPCG01N3/02G01N3/08G01N3/20G01N2203/0017G01N2203/0023G01N2203/005
Inventor 于海超周明赵梁玉刘明星
Owner 强一半导体(苏州)股份有限公司
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