Silicon carbide coaxial ultraviolet photoelectric detector and preparation method thereof

Abstract

The invention discloses a silicon carbide coaxial ultraviolet photoelectric detector and a preparation method thereof, and relates to an ultraviolet photoelectric detector. The silicon carbide coaxialultraviolet photoelectric detector is provided with a silicon carbide n+ type substrate with high doping concentration, wherein a homogeneous n- type buffer layer is arranged on the silicon surface of the n+ type substrate, a cylindrical silicon carbide n- type layer is arranged upwards in the center of the n- type buffer layer, a cylindrical tubular silicon carbide low-doped i type absorption layer and a cylindrical tubular silicon carbide p+ type ohmic contact layer are sequentially arranged outwards by taking the axis of the n- type layer as the center, the p+ type ohmic contact layer is completely arranged at the upper portion of the i type absorption layer side and is not in contact with the n+ type substrate, the whole device forms a p-i-n structure from outside to inside in the horizontal direction, SiO2 passivation layers are arranged on the surfaces of the p+ type ohmic contact layer, the i type absorption layer and the n- type layer, an n+ type electrode is arranged on the back face of the n+ type substrate, and a p+ type electrode is arranged on the upper surface of the p+ type ohmic contact layer side. According to the invention, good device responsivity can be acquired, and the efficiency of collecting photon-generated carriers is improved.

Description

technical field [0001] The invention relates to an ultraviolet photodetector, in particular to a silicon carbide coaxial ultraviolet photodetector capable of significantly improving the absorption and responsivity of ultraviolet solar-blind short-wave band signals and a preparation method thereof. Background technique [0002] As ultraviolet rays are more and more widely used in industrial manufacturing, medical sanitation and disinfection, and environmental monitoring, the detection technology of ultraviolet light band signals, especially ultraviolet light solar-blind band (wavelength 0.20-0.28μm) signals is gradually It has been paid attention to, and ultraviolet photodetectors of different materials and structures have been developed one after another. Among them, ultraviolet photodetectors of semiconductor materials have excellent characteristics such as low voltage, small size, and long life, which have become research hotspots. [0003] At present, the technology of si...

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Problems solved by technology

[0004] The purpose of the present invention is to solve the shortcomings of the p+ layer in the silicon carbide ultraviolet photodetector with the conventional vertical sandwich p-i-n structure that the absorption of the ultraviolet incident signal leads to a decrease in responsivity and quantum efficiency, and provide a device that can improve the absorption of the incident light and the Carrier conversion, a silicon carbide coaxial ultraviolet photodetector and its preparation method for improving the detection ability of the detector

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