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A photonic crystal high-power laser and its preparation method

A high-power laser, photonic crystal technology, applied in semiconductor lasers, lasers, phonon exciters, etc., can solve the problems of limiting the application of semiconductor lasers and poor beam quality, and achieve a wide wavelength tuning range, high power, and narrow spectral lines. wide effect

Active Publication Date: 2021-07-02
Shandong Huaguang Optoelectronics Co. Ltd.
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The beam quality of semiconductor lasers is still poor at present, and this shortcoming greatly limits the application of semiconductor lasers. It is widely used in fields such as laser welding that only require low beam quality but require high power.

Method used

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  • A photonic crystal high-power laser and its preparation method
  • A photonic crystal high-power laser and its preparation method

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Experimental program
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Effect test

Embodiment 1

[0034] Further, the cross section of the air column 9 is circular, oval or polygonal.

[0035]A method for preparing a photonic crystal high-power laser, comprising the steps of:

[0036] a) Put the GaAs substrate into the growth chamber of the MOCVD equipment, and pass through , baked for 30 minutes in an environment with a temperature of 700±20°C, and after the , remove water and oxygen on the surface of the substrate to complete the heat treatment of the substrate surface;

[0037] b) Lower the temperature to 650±20°C and pass through and TMGa, growing a GaAs low-temperature buffer layer 1 with a thickness of 0.5-1 μm on the GaAs substrate;

[0038] c) The temperature is maintained at 650±20°C, and the , TMGa and TMAl, growing an AlGaAs lower confinement layer 2 on the GaAs low-temperature buffer layer 1;

[0039] d) The temperature is kept at 650±20°C, and the lower Bragg reflective layer 3 made of n-type AlxGayAs / AlxGayAs is grown on the AlGaAs lower confinemen...

Embodiment 2

[0048] Preferably, when growing the GaAs low-temperature buffer layer 1 in step b), the doping concentration in the growth chamber of the MOCVD equipment is 1E17-5E18 atoms / , when growing the AlGaAs lower confinement layer 2 in step c), the doping concentration in the growth chamber of the MOCVD equipment is 1E17-5E18 atoms / .

Embodiment 3

[0050] Preferably, the thickness of the lower Bragg reflective layer 3 in step d) is 0.5-2 μm, and the doping concentration in the growth chamber of the MOCVD equipment when growing the lower Bragg reflective layer 3 is 1E16-5E17 atoms / , when growing the lower Bragg reflection layer 3, cyclic growth is adopted, and the number of cycles is 20-30 times.

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Abstract

A preparation method of a photonic crystal high-power laser, by adding an isolation layer between the quantum well light-emitting layer and the lower Bragg reflection layer, and forming an air column into a photonic crystal by laser etching after the epitaxial wafer is grown, and the quantum well light-emitting layer works The generated photons can only pass through the surface of the photonic crystal through the resonant tunneling effect, which can effectively improve the wider tuning range and narrower line width. The lower Bragg emission layer and the upper Bragg reflection layer are integrated in one laser to form two independent gratings. To achieve a wider wavelength tuning range, narrower spectral linewidth, and higher power, the stimulated radiation light has the same frequency, phase, polarization and propagation direction as the external stimulated radiation light. Through stimulated emission, the number of homogeneous photons can be amplified to obtain coherent light with extremely high photon degeneracy. Since the power of lasers is generally low at present, high power can realize wider applications such as long-distance and multi-channel lasers.

Description

technical field [0001] The invention relates to the technical field of optoelectronic manufacturing, in particular to a photonic crystal high-power laser and a preparation method thereof. Background technique [0002] Due to their small size, low degradation rate, long-term use and high electro-optical conversion efficiency, semiconductor lasers are widely used in the application field, involving long-distance optical fiber signal transmission, welding processing and many other fields [16- twenty three]. [0003] The most important application of semiconductor lasers is optical fiber communication, which has very strict requirements on the spectrum of the light source. For this reason, people add a modulating periodic mechanism, such as a distributed Bragg reflection structure, in the longitudinal direction of the laser. Narrow linewidth distributed feedback Bragg diode laser (DFB-LD) is used for optical fiber communication, and the single channel code rate can reach 10Gb / ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343H01S5/187
CPCH01S5/187H01S5/343H01S5/34346
Inventor 李志虎于军邓桃朱振
Owner Shandong Huaguang Optoelectronics Co. Ltd.
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