Gate drive integrated circuit

An integrated circuit and gate drive technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of cumbersome circuit design and many signal ports, and achieve the effect of simplifying circuit design and reducing the number

Active Publication Date: 2020-06-23
NINGBO SEMICON INT CORP
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a gate drive integrated circuit to solve the problem that there are many signal ports in the existing gate drive integrated circuit, which easily leads to complicated circuit design.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gate drive integrated circuit
  • Gate drive integrated circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The gate drive integrated circuit proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0032] figure 1 It is a schematic structural diagram of the high-voltage gate drive integrated circuit in Embodiment 1 of the present invention, as shown in figure 1 As shown, the gate driver IC includes:

[0033] a substrate 100 in which a drift region 100N of a first doping type is formed, and the drift region 100N extends from a surface of the substrate 100 into the substrate 100; and,

[0034] A field effect transistor comprising a drain region 300D of a first dopin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a gate drive integrated circuit. In the gate drive integrated circuit, a source region, a first contact region and a field plate structure are sequentially arranged, so that thesource region, the first contact region and the field plate structure are enabled to be arranged adjacently in position, a signal line of the source region, a signal line of the first contact regionand a signal line of the field plate structure can be connected to the same signal port, the number of the signal ports of the gate drive integrated circuit can be reduced, the circuit design can be simplified, and the size of the device can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high-voltage gate drive integrated circuit. Background technique [0002] High-voltage gate drive integrated circuits are the product of the combination of power electronic device technology and microelectronic technology, and are the key components of mechatronics. High-voltage gate driver integrated circuits are widely used, such as electronic ballasts, motor drives, dimming, and various power modules. [0003] A high-voltage gate drive integrated circuit generally includes a high-side drive control module, a low-side drive control module, and a level shifter module. Among them, the low-voltage side drive control module works under the normal voltage as the control signal part; the high-voltage side drive control module mainly includes the high-voltage control signal part; and the level shift module is used to realize the transmission of the low-voltage side control s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/08H01L29/41H01L29/417H01L29/78
CPCH01L29/0847H01L29/41H01L29/41725H01L29/78H01L29/08H01L29/417
Inventor 杨维成姚旭红
Owner NINGBO SEMICON INT CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap