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Method for preparing spherical crystal film rubrene through induction of rigid structure polymer

A rigid polymer, spherical crystal technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problem of low quality coverage of thin-film rubrene spherulites, and rubrene is prone to secondary dissolution. , the use of large-scale equipment and other problems, to achieve the effect of rapid industrialization, non-toxic price, simple operation

Inactive Publication Date: 2020-06-19
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The purpose of the present invention is to provide a method for the preparation of spherical crystal film rubrene induced by a polymer with a rigid structure, which solves the following technical problems: 1. the mass coverage of film-like rubrene spherulites is low; 2. the substrate is toxic; 3. rubrene Secondary dissolution is easy to occur; ④Large-scale equipment is required and the production cost is high

Method used

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  • Method for preparing spherical crystal film rubrene through induction of rigid structure polymer
  • Method for preparing spherical crystal film rubrene through induction of rigid structure polymer
  • Method for preparing spherical crystal film rubrene through induction of rigid structure polymer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Spherical crystal film-like rubrene was induced by rigid structure polymer, the rigid structure polymer is PET.

[0042] First, cut a commercial 5cm×5cm FTO conductive glass sheet from the non-conductive side into 1cm×1cm as the substrate and wash and dry it; then prepare 1mL PET polymer solution with trifluoroacetic acid as solvent, the mass concentration is 2.5mg / mL; Using chloroform as the solvent and rubrene as the solute, the rubrene-chloroform solution was prepared under the condition of red light illumination in a dark room, with a mass concentration of 9.5mg / mL; then the PET polymer solution and rubrene- The chloroform solution was spin-coated on the FTO substrate respectively; finally, the FTO sheet was heat-treated under red light illumination in a dark room and wrapped in tin foil to avoid light.

[0043] The heat treatment parameters are as follows: heat preservation on a hot stage at 160°C for 50s; heat preservation on a hot stage at 135°C for 280s.

Embodiment 2

[0045]Spherical crystal film-like rubrene was induced by rigid structure polymer, the rigid structure polymer is PET.

[0046] First, a commercial 5cm×5cm FTO conductive glass sheet was cut from the non-conductive side into 1cm×1cm as the substrate and cleaned and dried; then 1mL PET polymer solution was prepared with trifluoroacetic acid as the solvent, and the mass concentration was 3mg / mL; Chloroform is a solvent, rubrene is a solute, and the rubrene-chloroform solution prepared under the condition of red light illumination in a dark room has a mass concentration of 10 mg / mL; Spin-coat on the FTO substrate respectively; finally, heat-treat the FTO sheet under red light lighting conditions in a dark room and wrap it in tin foil to avoid light.

[0047] The heat treatment parameters are as follows: heat preservation on a hot stage at 170°C for 60s; heat preservation on a hot stage at 140°C for 300s.

Embodiment 3

[0049] Spherical crystal film-like rubrene was induced by rigid structure polymer, the rigid structure polymer is PET.

[0050] First, cut a commercial 5cm×5cm FTO conductive glass sheet from the non-conductive side into 1cm×1cm as the substrate and wash and dry it; then prepare 1mL PET polymer solution with trifluoroacetic acid as solvent, the mass concentration is 2.8mg / mL; Using chloroform as the solvent and rubrene as the solute, the rubrene-chloroform solution prepared under red light lighting conditions in a dark room has a mass concentration of 10.2mg / mL; then use a homogenizer to mix the PET polymer solution and rubrene- The chloroform solution was spin-coated on the FTO substrate respectively; finally, the FTO sheet was heat-treated under red light illumination in a dark room and wrapped in tin foil to avoid light.

[0051] The heat treatment parameters are: 175°C on a hot stage for 65s; 142°C on a hot stage for 310s.

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Abstract

The invention belongs to the technical field of organic semiconductor materials, and particularly relates to a method for preparing spherical crystal film rubrene through induction of a rigid structure polymer, namely, under the condition of thermal annealing, a PET polymer layer is adopted to induce rubrene molecules to orderly grow into spherical crystals. A PET polymer induction layer dissolvedin trifluoroacetic acid is spin-coated on a fluorine-doped SnO2 conductive glass (FTO) substrate to form a polymer modification layer film, then a rubrene semiconductor layer dissolved by a chloroform solvent is spin-coated, and finally, a high-quality spherical rubrene crystal film is grown by adopting thermal annealing treatment. The rubrene spherocrystal obtained by the method is high in coverage rate, a basis is provided for preparing a high-performance organic field effect transistor, the adopted substrate is non-toxic and low in cost, PET cannot be secondarily dissolved due to chloroform, the spin-coating method is simple and convenient to operate, large-scale equipment is not needed, and industrial production is easy to implement. The preparation method is an innovation in the aspect of spherical crystal film rubrene preparation.

Description

technical field [0001] The invention belongs to the technical field of organic semiconductor materials, in particular to a method for preparing spherical crystal film rubrene induced by rigid structure polymers. Background technique [0002] With the development of information technology, people have higher and higher requirements for the performance of electronic materials. Due to the shortcomings of traditional inorganic semiconductor materials such as high price, complicated preparation process, difficulty in large-scale production, and inability to deposit on flexible substrates, the development of information technology was once restricted, while organic semiconductor materials are low in cost, easy to process, and highly scalable. Integration, easier industrialization and other advantages are expected to break through this bottleneck. Therefore, organic semiconductor materials have broad application prospects in the fields of flexible display and organic storage, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/30H01L51/46H01L51/54
CPCH10K71/12H10K85/622
Inventor 朱成瑶冯琳琳王家豪高婷婷王晨
Owner ZHENGZHOU UNIV
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