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Cubic zirconium sapphire growth crystal furnace and cubic zirconium sapphire synthesis method

A technology for growing crystals and sapphires, which is applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., and can solve problems such as few single crystals, poor crystal transparency, and unsatisfactory quality

Pending Publication Date: 2020-06-19
四川省久宝晶体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If you want to expand the output of a single furnace, you can only increase the power and increase the induction furnace, but the diameter of the current process induction furnace can only reach 1.5m at most. , so that the crystal transparency is poor and the quality cannot meet the requirements
[0004] Using the existing crystal furnace to produce sapphire, the output of a single furnace is low, there are few single crystals, and the cost of electricity is high
At present, the production processes at home and abroad are similar, basically reaching the bottleneck, and the center cannot melt and grow crystals. This is also the main reason for restricting the development of enterprises that produce cubic zirconia crystals.

Method used

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  • Cubic zirconium sapphire growth crystal furnace and cubic zirconium sapphire synthesis method
  • Cubic zirconium sapphire growth crystal furnace and cubic zirconium sapphire synthesis method
  • Cubic zirconium sapphire growth crystal furnace and cubic zirconium sapphire synthesis method

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Embodiment Construction

[0028] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below in conjunction with specific embodiments.

[0029] Such as figure 2 , image 3 As shown, the present invention provides a cubic zirconium sapphire growth crystal furnace, including a furnace body 1, and an induction copper tube 2 for heating is laid on the outside of the furnace body 1, and the induction copper tube 2 is vertically arranged, and its bottom is connected with the collector The tank chassis 5 is connected; the header chassis 5 is provided with a cooling water inlet 3 and a cooling water outlet 4 . The ratio of the length to the width of the furnace body 1 is greater than 1. Preferably the ratio of the length to the width of the furnace body 1 is 2. Specifically, the furnace body 1 has a width of 1-1.2m, a length of 2-2.4m, and a height of 0.8-1m.

[0030] The cross section of...

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Abstract

The invention discloses a cubic zirconium sapphire growth crystal furnace and a method for synthesizing cubic zirconium sapphire. The crystal furnace comprises a furnace body, wherein an induction copper pipe used for heating is laid outside the furnace body, and the ratio of the length to the width of the furnace body is larger than 1. By utilizing the high-frequency current induction frequency characteristic, the length of the furnace body is increased on the premise that central crystal melting is not affected, so that the volume of the furnace body is increased so as to increase the yield.

Description

technical field [0001] The invention relates to a crystal growth furnace for synthesizing cubic zirconia sapphire and a method for synthesizing sapphire by using the crystal furnace. Background technique [0002] Gem-grade synthetic cubic zirconia, also known as Soviet diamond, is a homogeneous crystal with a hardness as high as 8.5, a refractive index of 2.17, and a temperature resistance of more than 2,000 degrees. Therefore, it has been widely used in aerospace, optical fields, heat-resistant materials, jewelry, and civilian use. material. In recent years, the domestic production of cubic zirconia crystal market has been fiercely competitive, and the survival of the fittest is basically in a stable state. Moreover, the current production technology can be compared with foreign production technology, and it is competitive in terms of product output and quality, and the prospect is very promising. [0003] At present, the main method of synthesizing cubic zirconia crystal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/16
CPCC30B15/00C30B29/16
Inventor 陈珍富郑炳林唐大林
Owner 四川省久宝晶体科技有限公司
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