Asymmetric ferroelectric functional layer array and preparation method of ferroelectric tunnel junction multi-valued memory cell

Abstract

The invention provides an asymmetric ferroelectric functional layer array and a preparation method of an asymmetric ferroelectric tunnel junction multi-value storage unit. The asymmetric ferroelectric functional layer array is formed by alternately stacking N ferroelectric functional layers and N-1 insulating layers. , the preparation method includes: providing an electrode layer, growing N ferroelectric functional layers parallel to the first plane direction on the upper surface of the electrode layer, and separating adjacent ferroelectric functional layers by an insulating layer, so that the ferroelectric functional layers are separated by an insulating layer. The layers are crystallized so that the N ferroelectric functional layer materials exhibit ferroelectric properties; the physical parameters during the formation process of the N ferroelectric functional layers are different, so that the N ferroelectric functional layers exhibit different coercive field values. The physical parameters include the material type of the ferroelectric functional layer, the doping method of the ferroelectric functional layer material, the crystallization conditions of the ferroelectric functional layer, and the thickness of the ferroelectric functional layer material. The memory cell thus prepared can realize a variety of different storage states, thereby greatly improving the storage density and the unit storage capacity.

Description

technical field [0001] The invention belongs to the field of microelectronic devices, in particular to an asymmetric ferroelectric functional layer array, an asymmetric ferroelectric tunnel junction multi-value storage unit, a memory and a preparation method thereof. Background technique [0002] With the advent of the era of big data, the demand for information processing capacity and information storage capacity continues to increase, and the traditional von Neumann computer architecture and memory are increasingly difficult to meet the demand. Ferroelectric materials are used in the storage field due to their inherent advantages such as fast erasing and writing speed, ultra-low power consumption, many cycles, and non-volatile polarization state. New non-volatile materials such as FRAM, FeFET and FTJ based on ferroelectric materials Sexual memory has received a lot of attention. Among them, the FTJ memory modulates the interface barrier height of the insulating layer thro...

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Problems solved by technology

Therefore, MFIM-based memory can only be applied to binary memory, and it is difficult to meet the higher requirements of the future society for information processing capability and information storage capacity.

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