a photodetector

Abstract

In order to solve the problem that existing photodetectors have low responsivity and cannot meet the requirements of high optical power detection, an embodiment of the present application provides a photodetector, which relates to the technical field of photodetectors, and the photodetector includes: a silicon layer , the silicon layer includes a doped region of the first doping type; a germanium layer in contact with the silicon layer, the germanium layer includes a doped region of the second doping type; a silicon nitride waveguide, the nitride A silicon waveguide is disposed around the germanium layer along the extension direction of at least three sidewalls of the germanium layer; wherein the silicon nitride waveguide is used to transmit an optical signal and couple the optical signal to the germanium layer, The germanium layer is used to detect the optical signal and convert the optical signal into an electrical signal.

Description

technical field [0001] The embodiments of the present application relate to the technical field of photodetectors, and in particular to a photodetector. Background technique [0002] Silicon photonics technology is a new generation of optical device development and integration based on silicon and silicon-based substrate materials (such as SiGe / Si, silicon-on-insulator, etc.) using existing complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) technology technology. Silicon photonics technology combines the characteristics of ultra-large-scale and ultra-high-precision manufacturing of integrated circuit technology with the advantages of ultra-high speed and ultra-low power consumption of photonic technology. It is a disruptive technology to cope with the failure of Moore's Law. This combination benefits from the scalability of semiconductor wafer fabrication, thereby reducing costs. As one of the core devices of silicon photonics architect...

AI Technical Summary

Problems solved by technology

However, the energy band structure of crystalline silicon materials determines that its detection efficiency in the optical communication band is very low. Although III-V semiconductor materials are more suitable for photodetectors, III-V semiconductor materials are not compatible with silicon technology and cannot be used with silicon Carry out effective monolithic integration; Considering the compatibility of germanium material and CMOS process, the technology of using germanium material as light absorbing layer material to form germanium silicon photodetector has been proposed in this field

However, the current silicon germanium photodetectors have the disadvantages of low responsivity and cannot meet the needs of high optical power detection, so further improvement is needed

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