Test chip and integration method

Abstract

The invention provides a test chip which comprises test units, the test units are distributed in the chip in a single or array mode, each test unit comprises a plurality of basic units distributed inan array mode, and the basic units are connected in series, in parallel or both in series and in parallel. Each basic unit comprises a thermal test module, a stress test module and an electromigrationtest module; wherein the thermal test module comprises a heating element and a temperature measuring element; the stress test module comprises a stress test element; the electromigration test modulecomprises an electromigration test element; and the heating element, the temperature measuring element, the stress testing element and the electromigration testing element are externally connected with a driving power supply and a signal reading circuit respectively. The invention also provides an integration method of the test chip.

Description

technical field [0001] The invention relates to the technical field of semiconductor microfabrication, in particular to a test chip and an integration method. Background technique [0002] The reduction of transistor feature size and the advancement of three-dimensional packaging technology have promoted the continuous development of electronic devices in the direction of smaller feature size and high integration. Therefore, whether in the plane or in the three-dimensional direction, the transistor density and integration of electronic components are constantly increasing. The transmission and movement performance of the internal carriers in the channel changes. When the temperature of this point exceeds its normal operating temperature range, the chip performance will deviate from the normal working state, or even fail, especially for high-power, high-frequency devices, which are caused by chip heating. The problem is even worse. [0003] Therefore, the temperature distri...

AI Technical Summary

Problems solved by technology

When the electronic device is working, driven by the electric field of direct current, the electrons move from the negative pole to the positive pole of the conductor, and its kinetic energy also promotes the movement of metal atoms from the negative pole to the positive pole, thereby generating pits in the negative pole, which may cause an open circuit, while the positive pole produces metal atoms. Atomic accumulation produces bulges, causing chip / electronic device failure

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