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Method for post-processing light absorption layer of Cu-based thin film solar cell and depositing buffer layer

A technology for thin-film solar cells and light-absorbing layers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as Zn diffusion difficulties, performance degradation of thin-film solar cells, and obstacles to the marketization process, and achieve improved surface composition and morphology , Weaken the effect of light infiltration and improve the performance

Active Publication Date: 2020-03-20
THE CHINESE UNIVERSITY OF HONG KONG
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  • Abstract
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Problems solved by technology

[0002] In the existing thin-film solar cell preparation process, in the process of depositing the cadmium-free buffer layer Zn(O,S) on the light absorbing layer, the diffusion of Zn on the surface of the buffer layer is relatively difficult, and high temperature (200°C) treatment is usually required. In addition, , Thin-film solar cells based on cadmium-free buffer layer Zn(O,S) usually exhibit Light-soaking (light-soaking) effect, requiring additional light or heating to make it work properly
The existence of these problems will reduce the performance of thin-film solar cells based on cadmium-free Zn(O,S) buffer layer and cause certain obstacles to its marketization process.

Method used

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  • Method for post-processing light absorption layer of Cu-based thin film solar cell and depositing buffer layer
  • Method for post-processing light absorption layer of Cu-based thin film solar cell and depositing buffer layer
  • Method for post-processing light absorption layer of Cu-based thin film solar cell and depositing buffer layer

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preparation example Construction

[0052] The specific embodiment of the present invention also provides a method for preparing a thin film solar cell, comprising the following steps:

[0053] (1) depositing a back electrode layer on the substrate, and depositing a light absorbing layer on the back electrode layer;

[0054] (2) using the post-processing method in the above-mentioned embodiment to process the light-absorbing layer;

[0055] (3) Depositing a buffer layer Zn(O,S) on the light absorbing layer by using the method in the above embodiment;

[0056] (4) Depositing a window layer on the buffer layer Zn(O,S), and forming a gate on the window layer.

[0057] Preferably, the substrate is soda-lime glass; the back electrode is Mo, and the light absorption layer can be formed by co-evaporation in three steps.

[0058] Preferably, the window layer is magnesium-doped zinc oxide (ZnMgO) and aluminum-doped zinc oxide (Al:ZnO), which can be deposited by magnetron sputtering.

[0059] Preferably, the grid is a ...

Embodiment 1

[0062] The aftertreatment method of the light absorbing layer of CIGS thin film solar cell comprises the steps:

[0063] (1) Aqueous ammonia solution is configured, and the concentration of the aqueous ammonia solution is 1M;

[0064] (2) Place the CIGS light-absorbing layer in the ammonia solution in such a way that the surface to be treated of the light-absorbing layer is perpendicular to the liquid level of the ammonia solution, heat the solution to 65° C., and perform etching treatment for 5 minutes;

[0065] (3) Take out the treated CIGS light-absorbing layer, wash it with deionized water, dry it with gas, and store it in vacuum for future use.

[0066] After the above treatment, the surface composition and morphology of the CIGS light absorption layer can be improved. Such as Figure 1a with 1b Shown are the SEM images of the untreated CIGS light-absorbing layer and the SEM image of the above-mentioned CIGS light-absorbing layer; it can be seen from the figure that the...

Embodiment 2

[0068] The method for depositing buffer layer Zn (O, S) on the light absorbing layer of CIGS thin film solar cell comprises the steps:

[0069] (1) First mix and stir the zinc acetate solution and the citric acid solution for 5 minutes, then add the thioacetamide solution and the ammonia solution and mix and stir for 30 seconds at the same time to obtain a deposition solution. In the deposition solution, Zn 2+ concentration of 7.5mM, the concentration of citric acid was 6.5mM, S 2- The concentration is 7.5mM, the concentration of ammonia water is 1.4M;

[0070] (2) Immerse the CIGS light-absorbing layer processed by the post-treatment method of Example 1 in the deposition solution, and deposit a buffer layer Zn (O, S) on the light-absorbing layer by heating in a water bath. The temperature and temperature of the water-bath heating can be adjusted. The thickness of the buffer layer Zn(O,S) is controlled by the heating time and the amount of the precursor substance. In this exa...

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Abstract

The invention discloses a Cu-based thin film solar cell light absorption layer post-processing and buffer layer deposition method. The method comprises the following steps: (1) preparing an ammonia water solution with the concentration of 0.1-1M; (2) the light absorption layer is placed in the ammonia water solution for treatment for 1-10 min according to the preset angle between the to-be-treatedsurface of the light absorption layer and the liquid level of the ammonia water solution, and the treatment temperature ranges from 25 DEG C to 65 DEG C; and (3) taking out the treated light absorption layer, cleaning and drying. According to the invention, the surface composition and morphology of the light absorption layer can be improved; according to the Cu-based thin-film solar cell and thepreparation method thereof, mutual diffusion between the light absorption layer and the buffer layer Zn (O, S) is better facilitated, when the buffer layer Zn (O, S) is deposited, grains of the Zn (O,S) thin film are larger, the performance of the finally prepared Cu-based thin-film solar cell is improved, and meanwhile the light infiltration effect is greatly weakened.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, in particular to a method for post-processing a light-absorbing layer of a Cu-based thin-film solar cell and depositing a buffer layer. Background technique [0002] In the existing thin-film solar cell preparation process, in the process of depositing the cadmium-free buffer layer Zn(O,S) on the light absorbing layer, the diffusion of Zn on the surface of the buffer layer is relatively difficult, and high temperature (200°C) treatment is usually required. In addition, , Thin-film solar cells based on cadmium-free buffer layer Zn(O,S) usually exhibit Light-soaking (light-soaking) effect, requiring additional light or heating to make it work properly. The existence of these problems will reduce the performance of thin-film solar cells based on cadmium-free Zn(O,S) buffer layer and cause certain obstacles to their marketization process. Contents of the invention [0003] In order t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0392H01L31/18
CPCH01L31/18H01L31/03923H01L31/0392Y02P70/50
Inventor 李建民宫俊波孔一帆肖旭东
Owner THE CHINESE UNIVERSITY OF HONG KONG
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