IGBT over-temperature protection method and device for a permanent magnet synchronous motor

Abstract

The invention relates to the technical field of IGBT over-temperature protection, and discloses an IGBT over-temperature protection method and device of a permanent magnet synchronous motor. Wherein the overtemperature protection method of the IGBT of the permanent magnet synchronous motor comprises the following steps: S11, determining that the preset cut-off temperature of the permanent magnet synchronous motor is T e , the preset starting temperature is T s and the default exit temperature is T q ; S12, the maximum temperature of the IGBT of the permanent magnet synchronous motor at the same time is T 1 ; S13, if T 1 rise and at T s to T e Between, the torque output coefficient is S14, with T 1 rises, the torque output coefficient gradually decreases, when T 1 raised to T c After starting to decline, and T 1 at T d to T c Between, the torque output coefficient is where, T d For S15, with T 1 The decline, if T 1 at T q to T d Between, the torque output coefficient is the overtemperature protection method of the IGBT of the permanent magnet synchronous motor disclosed in the present invention can guarantee T 1 at T d to T c When fluctuating between, the external output torque of the permanent magnet synchronous motor remains unchanged, which ensures the stability of the external output of the permanent magnet synchronous motor and prevents the vehicle from shaking.

Description

technical field [0001] The invention relates to the technical field of IGBT over-temperature protection, in particular to an IGBT over-temperature protection method and device of a permanent magnet synchronous motor. Background technique [0002] The main power output unit and core component of the permanent magnet synchronous motor controller is the IGBT (Insulated Gate Bipolar Transistor, IGBT for short), which is composed of BJT (bipolar transistor) and MOS (insulated gate field effect tube) composed of a composite full-control voltage-driven power semiconductor device, which has the advantages of high input impedance of MOSFET and low conduction voltage drop of GTR. The saturation voltage of GTR is low, the carrying current density is large, but the driving current is large; the driving power of MOSFET is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. The IGBT combines the advantages of the above ...

AI Technical Summary

Problems solved by technology

[0005] Based on the above, the object of the present invention is to provide an over-temperature protection method for the IGBT of a permanent magnet synchronous motor, which solves the problems of poor real-time performance and poor temperature protection effect caused by changing the hardware circuit in the prior art, and at the same time It also solves the phenomenon of vehicle shaking caused by IGBT torque fluctuations caused by software settings in the prior art

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