Integrated circuit device and manufacturing method thereof

Abstract

The invention discloses an integrated circuit device and a manufacturing method thereof. The integrated circuit device comprises a plurality of stacked semiconductor devices; each semiconductor devicecomprises a substrate and a dielectric layer formed on the substrate, and the dielectric layers of two adjacent semiconductor devices are combined together in the stacking direction; a plurality of functional devices and a plurality of isolation structures are formed in the dielectric layer of at least one of the semiconductor devices, and the isolation structures are used for isolating the adjacent functional devices; each isolation structure comprises an isolation trench and a filler applied in the isolation trench, and an opening of the isolation trench is located in the surface, back on to the substrate, of the dielectric layer. According to the invention, the electric leakage risk and the capacitance coupling risk between the functional devices can be effectively reduced, and the reliability of metal interconnection on the hybrid bonding interface is effectively improved, so that the wafer bonding stability is improved.

Description

technical field [0001] The invention relates to an integrated circuit device and a preparation method thereof, in particular to the field of wafer hybrid bonding technology. Background technique [0002] Wafer hybrid bonding (hybrid bonding) process can combine wafers of different materials together, and is currently widely used in various aspects of electronic manufacturing. [0003] At present, when performing hybrid bonding, the functional devices of the upper wafer and the lower wafer to be hybrid bonded are generally connected correspondingly. However, leakage problems and capacitive coupling (coupling) problems commonly exist between functional devices, and there are often problems of low reliability of metal interconnections on hybrid bonding interfaces, resulting in reduced stability of wafer bonding. Contents of the invention [0004] A brief summary of one or more aspects is presented below to provide a basic understanding of these aspects. This summary is not ...

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the common problems of leakage and capacitive coupling between functional devices and functional devices in the prior art, and often have the defects of low reliability of metal interconnection on the hybrid bonding interface, An integrated circuit device and its manufacturing method are provided

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