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Wavelength Tuning of ZnSe Quantum Dots Using In3+ Salts as Dopants

一种铟掺杂、发射波长的技术，应用在纳米领域，能够解决不能制成纯ZnSe、光致发光量子产率受损等问题

Active Publication Date: 2020-01-07
SHOEI CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

An important obstacle to the use of ZnSe in display applications is that pure ZnSe cannot be made with sufficiently long wavelengths to achieve the desired CIE coordinates, and the photoluminescence quantum yield suffers significantly as the emission wavelength increases above 435 nm

Method used

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  • Wavelength Tuning of ZnSe Quantum Dots Using In3+ Salts as Dopants
  • Wavelength Tuning of ZnSe Quantum Dots Using In3+ Salts as Dopants
  • Wavelength Tuning of ZnSe Quantum Dots Using In3+ Salts as Dopants

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0246] InCl 3 -Synthesis of doped ZnSe nanostructures

[0247] Oleylamine (15 mL) was added to a 100 mL three-necked flask and vacuum degassed at 110° C. for 30 minutes. The mixture was heated to 300°C under nitrogen flow. At this temperature, 1.5 mL of a solution of trioctylphosphine selenide (TOPSe, 1.92M) and diphenylphosphine (225 μL) in trioctylphosphine (TOP, 1.0 mL total) was added to the flask. Once the temperature rebounded to 300°C, diethylzinc (295 μL) in TOP (2.5 mL) and indium chloride (8 mg, 36 μmol) in TOP (2.5 mL) were injected rapidly. The temperature was set at 280°C and after 5 min a solution of diethylzinc (1.38 mL) and 10.5 mL of TOPSe (1.92M) in TOP (total 6.5 mL) was fed at a rate of 1 mL / min. Stop for 10 minutes after 7.5 mL, and stop for 15 minutes after 9.5 mL. Starting 26 minutes after the zinc infusion, additional oleylamine (20 mL) was infused at a rate of 1.5 mL / min. After the infusion was complete, the reaction mixture was maintained at 280°...

Embodiment 2

[0249] InCl 3 Synthesis of Doped ZnSe / ZnSe / ZnS Core / Buffer / Shell Nanostructures

[0250] InCl with an average diameter of 4.0 nm with 4ML ZnSe buffer layer and 6ML ZnS using the following procedure 3 The ZnSe / ZnS buffer layer / shell is coated on the doped ZnSe nanocrystal core.

[0251] Into a 100 mL three-necked flask were added zinc oleate (6.03 g), lauric acid (3.85 g) and trioctylphosphine oxide (4.93 g). After three cycles of vacuum and nitrogen backfill, TOP (9.9 mL) and InCl 3 A solution of doped ZnSe cores (1.5 mL, 78.9 mg / mL in toluene) was added to the flask. The solution was degassed under vacuum at 100°C for 20 minutes, then heated to 310°C under nitrogen flow. Ten minutes after reaching this temperature, a slow infusion of TOPSe (9.5 mL, 0.3 M in TOP) was started at a rate of 0.19 mL / min. After the selenium infusion was complete, the reaction was maintained at 310°C for 10 minutes. An infusion of tributylphosphine sulfide (16.9 mL, 0.4M in TOP) was then start...

Embodiment 3

[0253] Synthesis of Indium-doped ZnSe Nanostructures

[0254] Indium-doped ZnSe nanostructures can be prepared using the procedures in Examples 1-2 using various indium salts. The amounts and resulting optical properties of the indium-doped ZnSe / ZnS core / shell nanostructures are provided in Table 1.

[0255] Table 1

[0256]

[0257] as table 1 and figure 1 As shown, the PWL of indium-doped ZnSe core and ZnSe / ZnSe / ZnS core / buffer / shell nanostructures can be tuned by varying the amount and type of indium salt used.

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Abstract

The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising an indium-doped ZnSe core and ZnS and / or ZnSe shell layers. The invention also relates to methods of producing such nanostructures.

Description

technical field [0001] The present invention relates to the field of nanotechnology. More specifically, the present invention relates to highly luminescent nanostructures, especially highly luminescent nanostructures comprising an indium-doped ZnSe core and a ZnS and / or ZnSe shell. The invention also relates to methods of producing such nanostructures. Background technique [0002] Semiconductor nanostructures can be incorporated into various electronic and optical devices. The electrical and optical properties of such nanostructures vary eg according to their composition, shape and size. For example, the size-tunable properties of semiconductor nanoparticles are of great interest for applications such as light-emitting diodes (LEDs), lasers, and biomedical marking. Highly luminescent nanostructures are particularly ideal for this application. [0003] To fully exploit the potential of nanostructures in applications such as LEDs and displays, nanostructures need to satis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88H01L51/50H01L51/54B82Y20/00B82Y40/00
CPCC09K11/883B82Y20/00B82Y40/00H10K50/115H10K2102/00C01B19/007B82Y30/00H01L33/285H01L33/04H01L33/16C01P2002/84C01P2002/52Y10T428/2991
Inventor J·特拉斯基尔C·伊彭J·曼德斯I·J-L·普兰特
Owner SHOEI CHEM IND CO LTD
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