Array substrate and preparation method thereof, and display panel

Abstract

The invention discloses an array substrate and a preparation method thereof, and a display panel and is used for avoiding breakage of an oxide active layer and improving the product yield. The preparation method of the array substrate comprises steps of forming a first active layer and a first gate layer on the substrate, forming a second active layer and a second gate layer, forming a first through hole and a second through hole for exposing the first active layer, performing the buffer oxide etching process on the first active layer, forming a first source-drain electrode layer comprising afirst source electrode layer which is in contact with the first active layer through the first through hole and a first drain electrode layer which is in contact with the first active layer through the second through hole, forming a third through hole and a fourth through hole for exposing the second active layer, and forming a second source-drain electrode layer comprising a second source electrode layer in contact with the second active layer through a third through hole and a second drain electrode layer in contact with the second active layer through a fourth through hole, and electricallyconnected the second source electrode layer or the second drain electrode layer with the first source-drain electrode layer.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display panel. Background technique [0002] Low Temperature Polycrystalline Oxide (LTPO) Thin Film Transistor (TFT) technology combines the advantages of low temperature polysilicon (Low Temperature Poly-silicon, LTPS) high electron mobility and stability, and oxide (Oxide) has the advantages of good TFT uniformity and less leakage. It is considered to be a new technology that can reduce the power consumption of mobile devices. With the same power consumption, LTPO display products can achieve larger images, which is more suitable for large-scale full-screen displays. the trend of. [0003] The preparation process of LTPO in the prior art is: firstly perform etching to expose holes in the Indium Gallium Zinc Oxide (IGZO) active layer, then form a metal layer as the source and drain layer of the Oxide TFT, and ...

AI Technical Summary

Problems solved by technology

However, due to the need to use BOE etching solution in the BOE process, even if the IGZO active layer in the via area is covered by the metal layer, due to the poor coverage of the metal layer, the BOE etching solution will still seep into the IGZO active layer, resulting in IGZO Crack, leading to failure of TFT devices

[0004] To sum up, in the prior art LTPO preparation process, the oxide active layer is easily affected by the BOE etchant and cracks appear, which leads to the failure of TFT devices and greatly affects the product yield.

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