A method, device and electronic equipment for obtaining the thickness of oxide film layer of composite material

Abstract

The invention relates to a method, device and electronic equipment for obtaining the thickness of an oxide film layer of a composite material. The method starts from the basic principle of the ablation process, and through theoretical analysis and formula derivation, provides the general application of this type of material in the inert oxidation stage. The relationship between the thermophysical data of different components is established, so that according to the measurement results of the pure substance, the thermophysical parameters of the composite material can be obtained through simple calculation, and then the thickness of the oxide film layer of the composite material can be obtained. According to the oxide film of the composite material Judging the thermal protection performance of the aircraft by layer thickness can greatly simplify the problem, avoid the influence of process and impurities, obtain accurate data, and greatly shorten the design cycle. In addition, the method of the present invention has versatility and is applicable to Wide range and strong practicability.

Description

technical field [0001] The invention relates to a method, device and electronic equipment for obtaining the thickness of an oxide film layer of a composite material, and belongs to the technical field of aerospace vehicle thermal protection. Background technique [0002] Ultra-high temperature ceramic composite materials represented by C / SiC composite materials have the characteristics of high temperature resistance, oxidation resistance, and low / non-ablation. protection. When the temperature of this kind of material is lower than 2600°C (close to the maximum allowable temperature of the surface of the space vehicle), there may be two damage mechanisms of active oxidation and inert oxidation. The ablation of SiC depends on the partial pressure of oxygen, the surface temperature and the microstructure of the material. and ingredients. At low pressure and high temperature, it is active oxidation, and the exposed SiC directly reacts with oxygen to form gaseous products SiO an...

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Problems solved by technology

[0003] When calculating the thickness of the oxide film, the oxidation kinetic data of the material must be known in advance, but the materials produced by different material development units through different processes and adding different impurities are very different, and even different batches of the same material are not completely accurate. Similarly, if you have to measure the thermal physical and chemical kinetic data of the material every time, it is not only time-consuming and laborious, but also the measurement results may not be applicable to the next batch of materials. If the time is not accurate, it may be caused by non-ablation state, become rapid ablation, the consequences will be very serious

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