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Source bottle used for thin film deposition equipment and semiconductor equipment

A thin film deposition and source bottle technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as solid source condensation, and achieve simplified sealing design, improved space utilization, and uniform temperature distribution Effect

Active Publication Date: 2019-11-15
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of this invention is to provide a kind of source bottle for thin film deposition equipment, to overcome the phenomenon that the existing source bottle for thin film deposition equipment is prone to solid source condensation

Method used

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  • Source bottle used for thin film deposition equipment and semiconductor equipment
  • Source bottle used for thin film deposition equipment and semiconductor equipment
  • Source bottle used for thin film deposition equipment and semiconductor equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0056] figure 2 with image 3 respectively showing a longitudinal sectional view and a transverse sectional view of a source bottle for a thin film deposition apparatus according to an exemplary embodiment of the present invention, Figure 4 A partial longitudinal sectional view showing a source bottle for a thin film deposition apparatus according to an exemplary embodiment of the present invention, Figure 5 A longitudinal sectional view showing a carrier of a source bottle for a thin film deposition apparatus according to an exemplary embodiment of the present invention.

[0057] Such as Figure 2-5 As shown, the source bottle used for thin film deposition equipment according to the exemplary embodiment includes a source bottle body 8, an internal rotating member arranged in the source bottle body 8 and connected to it, and a carrier 11 for carrying a solid state source 10. Based on the outer rotating part outside the source bottle body 8 and the drive motor 13 for driv...

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PUM

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Abstract

The invention discloses a source bottle used for thin film deposition equipment and semiconductor equipment. The source bottle used for the thin film deposition equipment comprises a source bottle body, an inner rotating piece arranged in the source bottle body and connected with the source bottle body, bearing pieces used for bearing a solid-state source, an outer rotating piece arranged outsidethe source bottle body and a driving assembly used for driving the outer rotating piece to rotate, wherein the outer rotating piece can drive the inner rotating piece to rotate through the magnetic force action to drive the bearing pieces to rotate so as to stir the solid-state source. According to the source bottle used for the thin film deposition equipment and the semiconductor equipment, the outer rotating piece can drive the inner rotating piece to rotate through the magnetic force action to drive the bearing pieces to rotate to stir the solid-state source so as to prevent the solid-statesource from condensing.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing equipment, in particular to a source bottle used for thin film deposition equipment and semiconductor equipment including the source bottle. Background technique [0002] At present, thin film deposition reaction systems and methods are widely used in equipment manufacturing in various fields, such as semiconductors, integrated circuits, solar panels, flat panel displays, microelectronics, light emitting diodes, and the like. Forming a thin film with a thickness of 10 μm or less than 10 μm on the surface of a substrate by chemical vapor deposition (Chemical Vapor Deposition, CVD) technology is a common method for thin film deposition. Most CVD technologies need to provide a variety of gases or vapors to deposit and form films in order to obtain the desired performance and chemical composition, and the reaction gases are generally mixed in the reaction chamber and reacted under certain co...

Claims

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Application Information

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IPC IPC(8): C23C16/44C23C16/455
CPCC23C16/44C23C16/45544
Inventor 兰云峰史小平李春雷王勇飞王帅伟
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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