Nitrogen-containing doped graphene preparation equipment

Abstract

The invention discloses nitrogen-containing doped graphene preparation equipment which structurally comprises a reaction furnace, a console, a fixing base, support columns and an isolation device, wherein the reaction furnace is fixedly connected with the support columns; five support columns are uniformly distributed at the bottom of the reaction furnace; the reaction furnace is internally provided with the isolation device; the console is connected with the outer wall of the reaction furnace; and the support columns are mechanically welded with the fixing base. The equipment has the beneficial effects that due to alternative distribution of baffle plates and rubber blocks at isolation cover holes, gaps among rubber blocks can be filled by using the baffle plates, then the isolation strength inside and outside the isolation cover holes the can be increased, a metal catalyst in an isolation cover is not reacted with substances in a reaction cavity under a condition that external temperatures are changed, and the content of nitrogen in prepared nitrogen-doping graphene can be identical.

Description

technical field [0001] The invention relates to the field of graphene batteries, in particular to a device for preparing graphene doped with nitrogen. Background technique [0002] Pure graphene has insufficient active sites, is not selective, and does not have a good matching degree in practical applications. Therefore, in order to make up for the defects of graphene itself, the energy band gap of graphene can be opened by doping, and change Due to the acid-base properties of graphene, the current preparation equipment with nitrogen-doped graphene has the following defects: [0003] In the existing process of preparing nitrogen-doped graphene by CVD method, it needs to be prepared under high temperature conditions, so it is necessary to heat the reaction furnace to make it reach the reaction temperature, thereby forming a precipitate on the surface of the metal catalyst. , the prepared nitrogen-doped graphene has a porous network structure, and the size and quantity of the...

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Problems solved by technology

[0002] Pure graphene has insufficient active sites, is not selective, and does not have a good matching degree in practical applications. Therefore, in order to make up for the defects of graphene itself, the energy band gap of graphene can be opened by doping, and change Due to the acid-base properties of graphene, the current preparation equipment with nitrogen-doped graphene has the following defects:

[0003] In the existing process of preparing nitrogen-doped graphene by CVD method, it needs to be prepared under high temperature conditions, so it is necessary to heat the reaction furnace to make it reach the reaction temperature, thereby forming a precipitate on the surface of the metal catalyst. , the prepared nitrogen-doped graphene has a porous network structure, and the size and quantity of the internal mesh of the material increase with the increase of temperature, resulting in different nitrogen content in the obtained nitrogen-doped graphene, which affects the later stage of nitrogen-doped graphene. Made battery quality

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