Multi-wavelength GaN-based core-shell nanorod LED device structure and preparation method thereof

Abstract

The invention discloses a multi-wavelength GaN-based core-shell nanorod LED device structure and a preparation method thereof. A self-organized Ni nano island formed by high-temperature ammonia annealing is used as a template to prepare GaN nanorods with high consistency; a wet etching technology is then used to repair dry etching damage on the nanorod surface, n-type GaN regrowth is carried out on the obtained GaN nanorod array, and a six-sided pillar with a top cone is formed; multi-quantum well layers and P-type GaN layers coating the surfaces of the GaN nanorod array are sequentially stacked to obtain the multi-wavelength GaN-based core-shell nanorod LED device structure. The GaN nanorod array and the multi-quantum well layers and the P-type GaN layers coating the surfaces of the GaN nanorod array form the three-dimensional core-shell structure, which can generate more photons at the same current density and improve the internal quantum efficiency of an LED epitaxial structure. Themethod does not require a patterned substrate, the process cost is low, the preparation is simple and easy to implement, large-scale production is facilitated, and the core-shell nanorod array can bewidely applied to optoelectronic devices and microelectronic devices.

Description

technical field [0001] The invention relates to the field of semiconductor light-emitting devices, in particular to a multi-wavelength GaN-based core-shell nanorod LED device structure and a preparation method thereof. Background technique [0002] Among wide-bandgap semiconductors with direct bandgap, GaN-based semiconductors have the most development potential and development prospects. With their wide bandgap [0.64 eV (InN), 3.4eV (GaN), 6.2eV, (AlN)] and superior The performance (thermal stability, chemical stability and high thermal conductivity, etc.) has become a hot spot and focus in the research of optoelectronic materials and devices in recent years. GaN-based white light LEDs have the advantages of long service life, small size, high photoelectric conversion efficiency and low heat generation, and have been widely used in instrument and equipment lighting, aircraft lighting, automotive lighting, mobile phones, and decorative lighting. [0003] Traditional white L...

AI Technical Summary

Problems solved by technology

Compared with wet etching, dry etching has the advantages of good anisotropy and line width control, but due to the high energy of plasma, it will bring great damage to the surface of the etched material, resulting in the degradation of device performance. decline, which has become an urgent problem to be solved in dry etching

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