Monocrystalline silicon growth furnace one-furnace multitime doping device

Abstract

The invention belongs to the field of monocrystalline silicon growth furnace, and especially relates to a monocrystalline silicon growth furnace one-furnace multitime doping device. The monocrystalline silicon growth furnace one-furnace multitime doping device comprises a doping cylinder; a doping mechanism comprises an external cylinder; the cross section of the internal wall of the external cylinder is a N polygon; each of the N-1 edges is provided with a shaft seat, and each shaft seat is provided with a mandrel; the bottom cylinder wall of the doping cylinder is provided with an eccentricorfice; the mandrels are arranged on the eccentric orfice; the internal top of the external cylinder is provided with a sealing cover; a rotating shaft handle is connected with the sealing cover through a bearing and a sealing ring; the sealing cover is provided with a plurality of stopping holes; the stopping holes are arranged at positions corresponding to that of the doping cylinder; the lowerend of the rotating shaft handle is designed to penetrate the sealing cover, and is fixedly connected with a blocking plate, and the upper end is connected with a positioning stop pin; the bottom endof the positioning stop pin is inserted into one of positioning holes; and the blocking plate is provided with a notch. According to the monocrystalline silicon growth furnace one-furnace multitime doping device, multitime doping technology is adopted, so that uniform distribution of the doping element in crystal rods is ensured, crystal rod quality is increased, income is increased, and the defect in the prior art that only doping of one part of doping agent can be realized in one time is avoided.

Description

technical field [0001] The invention relates to the field of single crystal silicon growth furnaces, in particular to a single crystal silicon growth furnace one furnace multiple doping device. Background technique [0002] The monocrystalline silicon growth furnace is a kind of equipment that uses the Czochralski method to produce monocrystalline silicon rods. The principle is: use the graphite heater to melt the raw silicon, and use the seed crystal to pull out a single crystal silicon rod of a certain specification through a series of processes (seeding-shoulder-shoulder-turning-shoulder-equal diameter-finishing, etc.). With the continuous improvement of the quality requirements of monocrystalline silicon in the market, doped semiconductors have emerged as the times require. Compared with pure semiconductors, doped semiconductors have better electrical properties. Pure semiconductors rely on intrinsic excitation to generate carriers to conduct electricity. Generally spea...

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Problems solved by technology

The doping method is one-time doping in one furnace, and the doping material is directly poured into the silicon liquid. Due to the high temperature of the silicon liquid, the material volatilizes relatively quickly, resulting in uneven distribution of doping substances in the ingot, and low quality of the semiconductor ingot.

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