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Fabrication Technology of Large-area Double-sided Silicon Drift Detector

A technology of silicon drift detector and processing technology, applied in the direction of sustainable manufacturing/processing, semiconductor devices, climate sustainability, etc., can solve the problems of scrapping a unit, introducing impurities, etc., to reduce damage, improve quality, and simplify production Effect

Active Publication Date: 2021-01-26
湖南正芯微电子探测器有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Third, if an impurity is introduced into a large-area SDD unit during ion implantation, one unit will be scrapped, especially when one side is implanted, there is a risk of introducing impurities on the other side

Method used

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  • Fabrication Technology of Large-area Double-sided Silicon Drift Detector
  • Fabrication Technology of Large-area Double-sided Silicon Drift Detector
  • Fabrication Technology of Large-area Double-sided Silicon Drift Detector

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Embodiment Construction

[0120] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0121] The invention obtains special innovative processes such as gettering oxidation, double-sided photolithography, and protective double-sided ion implantation through experimental analysis, and establishes the innovation of high-energy resolution and efficient collection of SDD with an intensity of 0.5-15keV soft X-ray particles way of making.

[0122] The instrument used in the present invention:

[0123] The oxidation furnace oxidizes ultra-pure high-re...

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Abstract

The invention discloses a processing technique for a large-area double-sided silicon drift detector, belonging to the technical field of semiconductor detector processing. There are eight steps in the production of large-area SDDs, including wafer gettering oxidation, double-sided marking, front and back P-type implantation etching, N-type anode implantation etching, annealing after implantation, and front and back implantation area oxide layer Full etching, fabrication of front and back electrodes, and rapid annealing; eight steps are carried out in sequence to finally produce the required large-area SDD. The invention can achieve the purpose of improving the quality of wafer oxidation, the alignment accuracy of the front and back sides and greatly reducing the risk of introducing impurities while manufacturing the large-area double-sided SDD.

Description

technical field [0001] The invention belongs to the technical field of semiconductor detector processing, in particular to a processing technology of a large-area double-sided silicon drift detector. Background technique [0002] X-ray pulsars are remnants of the evolution, collapse, and supernova explosion of massive stars, and have extremely stable rotation periods (the stability is better than 10 -19 s / s), known as the most accurate astronomical clock in nature, can provide high-precision navigation information such as position, velocity, time, and attitude for near-Earth space, deep space exploration, and interstellar spaceflight spacecraft. Pulsar-based navigation is an eternal A new navigation system that cannot be destroyed. But the pulsar X-ray radiation flux is very low (10 -5 ph / s / cm 2 ), the detection is difficult, so the X-ray detector is the core component of the pulsar navigation system. The research on X-ray detectors in the world is developing towards the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/101
CPCH01L31/101H01L31/1876Y02P70/50
Inventor 李正刘曼文
Owner 湖南正芯微电子探测器有限公司
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