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Image sensor and manufacturing method thereof

A technology of image sensor and photosensitive unit, which is applied in the field of image sensor, can solve the problems of reducing image quality and running speed, etc., and achieve the effect of increasing photosensitive area, improving running speed, and increasing area ratio

Active Publication Date: 2019-08-23
ICLEAGUE TECH CO LTD
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  • Abstract
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  • Claims
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AI Technical Summary

Problems solved by technology

[0003] Therefore, the prior art reduces the image quality while reducing the manufacturing cost of the image sensor and increasing the operating speed, or increases the manufacturing cost of the image sensor while improving the image quality and reduces the operating speed

Method used

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  • Image sensor and manufacturing method thereof
  • Image sensor and manufacturing method thereof

Examples

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example 1

[0164] In order to increase the corresponding speed of the image sensor, the response speed of the image sensor can be improved by increasing the operation speed of the row selection device, the source follower device, and the reset device in the image sensor chip. Therefore, the operating speed of the above three devices can be increased by reducing the feature size of the integrated circuit, thereby increasing the response speed of the image sensor.

[0165] Image 6 shows a pixel unit, Figure 7 A pixel array is shown. In the image sensor, since the photosensitive element can only sense the intensity of light and cannot capture color information, the image sensor also includes a color filter located above the photosensitive element. In some examples, red, green and blue color filters can be used to cover four different photosensitive elements respectively, wherein the red filter covers the first image point, the blue filter covers the second image point, A green filter cov...

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Abstract

The embodiment of the invention discloses an image sensor and a manufacturing method thereof, and the image sensor comprises at least one pixel unit, wherein each pixel unit comprises a photosensitiveunit used for generating signal charges according to received optical signals; a transistor structure which is connected with the photosensitive unit and is used for outputting an image signal according to the signal charge, wherein the transistor structure comprises a channel structure, a gate structure covering a predetermined area of the channel structure, a source electrode structure locatedat a first end of the channel structure and a drain electrode structure located at a second end of the channel structure, and the second end is an opposite end of the first end, and the channel structure comprises at least two channels arranged side by side.

Description

technical field [0001] Embodiments of the present invention relate to the field of image sensors, in particular to an image sensor and a manufacturing method thereof. Background technique [0002] The core element of an image sensor is a pixel unit, which occupies most of the area of ​​the entire image sensor chip. On the one hand, in order to reduce the manufacturing cost of the image sensor and increase the operating speed of the image sensor, the size of the pixel unit is required to be small. On the other hand, in order to ensure image quality, enough light is required to be incident on the photoelectric conversion element of the pixel unit, and a larger pixel unit can have a larger photosensitive area to receive light, which can provide better image quality. [0003] Therefore, in the prior art, the image quality will be reduced while reducing the manufacturing cost of the image sensor and increasing the operating speed, or the manufacturing cost of the image sensor wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/1461H01L27/14614H01L27/14636H01L27/14621H01L27/14616H01L27/14689H01L27/14687
Inventor 周华
Owner ICLEAGUE TECH CO LTD
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