K ion doped zno photocatalytic material and its preparation method and application

A photocatalytic material and ion doping technology, applied in the field of K ion doped ZnO photocatalytic material and its preparation, can solve the problems of poor response to visible light, low rapid recombination quantum yield, etc. The effect of improving the photocatalytic activity and reducing the recombination rate

Active Publication Date: 2021-07-20
LIAONING UNIVERSITY
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  • Claims
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Problems solved by technology

Although it has many advantages, it also has certain limitations: the photocatalytic reaction has a poor response to visible light because of its wide bandgap (3.37eV) and the low quantum yield of fast recombination of photogenerated electron-hole pairs. Its photocatalytic activity has a great inhibitory effect

Method used

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  • K ion doped zno photocatalytic material and its preparation method and application
  • K ion doped zno photocatalytic material and its preparation method and application
  • K ion doped zno photocatalytic material and its preparation method and application

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Embodiment 1

[0028] (1) K ion doped ZnO photocatalytic material

[0029] The preparation method is as follows:

[0030] 1) Pour 0.44g (2mmol) of zinc acetate into a beaker filled with 20ml of methanol solution, stir for 15min to fully dissolve;

[0031] 2) Grinding potassium hydroxide into powder. 2.24mg (0.04mmol) potassium hydroxide (K + The molar mass of Zn 2+ 2% of molar weight) is poured in the zinc acetate solution in stirring, continues to stir until potassium hydroxide dissolves;

[0032] 3) Put the mixed solution obtained in step 2) in an oven, dry at 80°C, and cool naturally to obtain the precursor;

[0033] 4) Grinding the precursor obtained in step 3), and then heating up to 450° C. for 2 h at a rate of 5° C. / min for high-temperature calcination to obtain the K ion-doped ZnO photocatalytic material K-ZnO.

[0034] 5) Prepare K in the same way as step 1) to step 4) + The molar mass of Zn 2+ 4%, 6%, 8%, 10% of the molar amount of K ions doped ZnO photocatalytic material. ...

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Abstract

The invention discloses a K ion-doped ZnO photocatalytic material, a preparation method and an application thereof. Dissolve the zinc salt in an organic solvent, pour a certain molar ratio of potassium salt or potash into the stirring zinc salt solution, and continue stirring until dissolved; place the resulting mixed solution in an oven to dry to obtain a precursor; Carry out high-temperature calcination to obtain K‑ZnO. The K ion-doped ZnO photocatalytic material prepared by the method of the present invention improves the defect that ZnO has low response to visible light, changes the energy band structure, improves the electron-hole separation rate, reduces the electron-hole recombination rate, and then can The photocatalytic activity is effectively improved, and the method is low in cost, simple in method and simple in operation. It can degrade organic pollutants under the irradiation of visible light.

Description

technical field [0001] The invention belongs to the technical field of photocatalytic materials, and in particular relates to a K ion-doped ZnO photocatalytic material and a preparation method and application thereof. Background technique [0002] With the development of human society, the combustion of fossil fuels has caused a series of serious environmental problems, and the acquisition and conversion of solar energy into usable energy has become a key issue for human society. Photocatalytic technology is a sustainable and environmentally friendly technology. It uses sunlight to degrade organic pollutants. It has the characteristics of no secondary pollution and recyclable regeneration. In recent years, metal and non-metal composite materials have received extensive attention from researchers. ZnO is a low-cost, low-toxic metal oxide semiconductor with good electron transfer ability and strong oxidation holes under electromagnetic irradiation. Although it has many advan...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/06B01D53/72B01D53/86C07C45/39C07C49/08
CPCB01D53/8668B01D2257/704B01J23/06C07C45/39C07C49/08
Inventor 范晓星成祥祥李林丽贾兰蔡鹤王晓娜
Owner LIAONING UNIVERSITY
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