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Light-emitting diode epitaxial wafer and preparation method thereof

A technology of light-emitting diodes and epitaxial wafers, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of accumulation, reduction of electron and hole recombination probability, etc., to alleviate lattice mismatch, reduce stress and defects, and improve The effect of luminous efficiency

Active Publication Date: 2020-10-16
华灿光电(广东)有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

[0006] The embodiment of the present invention provides a light-emitting diode epitaxial wafer and its preparation method, which can solve the stress and defect accumulation in the active layer caused by the lattice mismatch between the substrate and the epitaxial layer in the prior art, resulting in electrons and holes The problem of reduced compound probability of

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  • Light-emitting diode epitaxial wafer and preparation method thereof
  • Light-emitting diode epitaxial wafer and preparation method thereof
  • Light-emitting diode epitaxial wafer and preparation method thereof

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Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0033] An embodiment of the present invention provides a light emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a light emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the light-emitting diode epitaxial wafer includes a substrate 10, a buffer layer 20, an N-type semiconductor layer 30, an active layer 40, and a P-type semiconductor layer 50, and the buffer layer 20, the N-type semiconductor layer 30, the active layer 40, and the P-type semiconductor layer Layers 50 are sequentially stacked on substrate 10 .

[0034] In this example, if figure 1 As shown, the LED epitaxial wafer further includes a stress release layer 100 disposed between the N-type semicondu...

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Abstract

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the technical field of semiconductors. The light-emitting diode epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, and the buffer layer, the N-type semiconductor layer, the active layer, and the P-type semiconductor layer Layers are sequentially stacked on the substrate; the light emitting diode epitaxial wafer also includes a stress release layer disposed between the N-type semiconductor layer and the active layer, and the stress release layer includes sequentially stacked AlGaN layers and an InGaN layer, the content of the Al component in the AlGaN layer gradually decreases along the direction from the N-type semiconductor layer to the active layer, and the content of the In component in the InGaN layer decreases along the direction from the N-type semiconductor layer to the active layer. The direction from the semiconductor layer to the active layer gradually increases. The invention is beneficial to the recombination of electrons and holes in the active layer to emit light, and improves the luminous efficiency of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light and is made by using the principle of semiconductor PN junction electroluminescence. The chip is the core component of the LED, including epitaxial wafers and electrodes arranged on the epitaxial wafers. [0003] Existing LED epitaxial wafers include a substrate and an epitaxial layer grown on the substrate. The epitaxial layer includes a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer stacked on the substrate in sequence. Among them, the substrate provides the surface for epitaxial growth, the buffer layer provides the nucleation center for epitaxial growth, the N-type semiconductor layer prov...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/12H01L33/32H01L33/00
CPCH01L33/0066H01L33/0075H01L33/12H01L33/325
Inventor 蒋媛媛纪磊从颖胡加辉李鹏
Owner 华灿光电(广东)有限公司
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