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2D Ti3C2-MXene thin film material, preparation method thereof and application of material in resistive random access memory (RRAM)

A technology of resistive memory and thin film materials, applied in electrical components and other directions, can solve the problems of increasing power consumption and complexity of peripheral circuits, difficulty in preparing multi-component compound films, poor adhesion between films and substrates, etc., and achieves easy modification. and treatment, the preparation process is non-toxic, and the effect of reducing the preparation cost

Pending Publication Date: 2019-08-06
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Binary oxides have the advantages of simple structure, easy control of material components, and compatibility between the preparation process and the semiconductor process, but generally require a large initial voltage to form a conductive channel in the resistive layer, which increases power consumption and the complexity of peripheral circuits. degree
The preparation process of ternary and multi-component oxide materials is relatively complicated, and the composition ratio is difficult to control and difficult to be compatible with the current CMOS process. Therefore, the research on resistive variable memory based on multi-component metal oxides is mainly carried out in laboratories. The application of such materials in the industrial field The future is not clear
The disadvantage of magnetron sputtering is that it is difficult to prepare a multi-component compound film with a controllable stoichiometric ratio; the disadvantage of the sol-gel method is that the adhesion between the film and the substrate is poor, and the density of the film is not high.
The disadvantage of plasma oxidation technology is that the requirements for the experimental environment are extremely high, and the cost of experimental preparation is high.

Method used

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  • 2D Ti3C2-MXene thin film material, preparation method thereof and application of material in resistive random access memory (RRAM)
  • 2D Ti3C2-MXene thin film material, preparation method thereof and application of material in resistive random access memory (RRAM)
  • 2D Ti3C2-MXene thin film material, preparation method thereof and application of material in resistive random access memory (RRAM)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] A two-dimensional Ti of the present embodiment 3 C 2 -The preparation method of MXene film material, comprises the steps:

[0053] Step 1. Clean the FTO (fluorine-doped tin oxide) conductive glass substrate

[0054] The first step is to tape a thickness of 100nm and a sheet resistance of 14Ω sq -1 The bottom electrode of the FTO and the square conductive glass with a side length of 1cm are ultrasonically cleaned in a mixed solution of detergent powder and deionized water for 15 minutes. In the second step, take out the FTO conductive glass and put it in a mixture of hand sanitizer and deionized water Ultrasonic cleaning for 15 minutes. In the third step, take out the FTO conductive glass and put it into acetone for ultrasonic cleaning for 15 minutes. In the fourth step, put the FTO conductive glass in ethanol solution and ultrasonically clean it for 15 minutes.

[0055] Step 2. UV treatment of FTO surface

[0056] Dry the above cleaned FTO, stick insulating tape on ...

Embodiment 2

[0065] A two-dimensional Ti of the present embodiment 3 C 2 -The preparation method of MXene film material, comprises the steps:

[0066] Step 1. Clean the ITO conductive glass substrate

[0067] The first step is to tape a thickness of 200nm and a sheet resistance of 15Ω sq. -1 The ITO bottom electrode and the square conductive glass with a side length of 1.5cm are ultrasonically cleaned in a mixed solution of detergent powder and deionized water for 15 minutes. In the second step, take out the ITO conductive glass and put it into a mixture of hand sanitizer and deionized water Ultrasonic cleaning in medium for 15 minutes, the third step, take out the ITO conductive glass and put it in acetone for ultrasonic cleaning for 15 minutes, the fourth step, put the ITO conductive glass in ethanol solution and ultrasonic cleaning for 15 minutes.

[0068] Step 2. UV treatment of ITO surface

[0069] Dry the above cleaned ITO, stick insulating tape on the edge of the sheet to form a r...

Embodiment 3

[0077] A two-dimensional Ti of the present embodiment 3 C 2 -The preparation method of MXene film material, comprises the steps:

[0078] Step 1. Clean the AZO conductive glass substrate

[0079] The first step is to tape a thickness of 300nm and a sheet resistance of 20Ω sq -1 The AZO bottom electrode and the square conductive glass with a side length of 2cm are ultrasonically cleaned in a mixed solution of detergent powder and deionized water for 15 minutes. In the second step, take out the AZO conductive glass and put it in a mixture of hand sanitizer and deionized water Ultrasonic cleaning for 15 minutes. In the third step, take out the AZO conductive glass and put it in acetone for ultrasonic cleaning for 15 minutes. In the fourth step, put the AZO conductive glass in ethanol solution and ultrasonically clean it for 15 minutes.

[0080] Step 2. UV treatment of AZO surface

[0081] Blow dry the cleaned AZO, paste insulating tape on the edge of the sheet to form a reser...

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Abstract

The invention relates to a 2D Ti3C2-MXene thin film material, a preparation method thereof and application of the material in an RRAM, and belongs to the technical fields of film preparation and microelectronic functional devices. An MXene film is prepared in the surface of a conductive substrate in a low-temperature one-step solution method, film formation is easy, and the film can be prepared ina large area more easily. The novel 2D material MXene is applied to the memory field instead of a traditional resistive switching material for the first time, the RRAM comprises a hard substrate, a bottom electrode, a resistive switching layer and a top electrode successively from bottom to top, the resistive switching layer is made of the 2D Ti3C2-MXene thin film material and in the thickness of100-450nm, a prepared device, as a nonvolatile memory, can keep the original resistive state when being powered off, and the device is kept stable after multiple continuous cycles, and is resistant to circulation.

Description

technical field [0001] The invention belongs to the technical field of film preparation and microelectronic functional devices, in particular to a two-dimensional Ti 3 C 2 -MXene thin film material and its preparation method and application in resistive memory. Background technique [0002] With the advent of the era of big data, people have higher and higher requirements for data storage. Memories based on the principle of charge storage, such as flash memory, are about to face the physical limit and technical limit of size reduction, and it is difficult to meet people's needs. Therefore, the development of new non-volatile memories with excellent performance has become a research hotspot in the semiconductor industry. [0003] Resistive variable memory uses thin film materials to exhibit different resistance states under the action of an external electric field to realize data storage. Resistive memory realizes storage through the reversible change of material resistanc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/881H10N70/8845H10N70/021H10N70/011
Inventor 马国坤赵青尧王浩蔡恒梅
Owner HUBEI UNIV
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