A kind of avalanche photodiode diffusion structure, preparation method and diode device

A diffusion structure, avalanche photoelectric technology, applied in the field of photodetectors, can solve the problems of low device reliability, high device cost, low device yield, etc., and achieve the effects of suppressing edge breakdown, uniform breakdown voltage, and optimizing edge curvature

Active Publication Date: 2021-04-23
UNIV OF SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

What all these approaches have in common is enlarged device area or more complex device fabrication, which can lead to lower device yield, higher device cost and lower device reliability

Method used

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  • A kind of avalanche photodiode diffusion structure, preparation method and diode device
  • A kind of avalanche photodiode diffusion structure, preparation method and diode device
  • A kind of avalanche photodiode diffusion structure, preparation method and diode device

Examples

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Effect test

Embodiment 1

[0037] In this embodiment, 100 samples selected from the same wafer are selected to test the breakdown voltage, and the 100 samples all have a diffusion trench region, a first guard ring, and a second guard ring;

[0038] The test results are as image 3 As shown, the range of the breakdown voltage of 100 samples selected from the same wafer is 1.44V, and the percentage of the corresponding deviation is slightly less than 2%. And the uniformity of its breakdown voltage is excellent (the average value is about 71V).

Embodiment 2

[0040] In this embodiment, 100 samples selected from the same wafer are selected to test the breakdown voltage, and the 100 samples all have the first guard ring and the second guard ring, but do not have the diffusion trench region;

[0041] The test results are as Figure 4 As shown, although there is a first guard ring and a second guard ring to suppress the edge breakdown and ensure a larger breakdown voltage (average value is about 72V), due to the non-diffusion trench area, the diffusion depth of each active area is different, and its The uniformity of the breakdown voltage is extremely poor, and the extreme difference of the breakdown voltage of 100 samples selected from the same wafer is 11.57V, and the corresponding deviation percentage is about 16%.

Embodiment 3

[0043] In this embodiment, 100 samples selected from the same wafer are selected to test the breakdown voltage, and the 100 samples all have diffusion trench regions, but do not have the first guard ring and the second guard ring;

[0044] The test results are as Figure 5 As shown, although there is a diffusion trench area to maintain the uniformity of diffusion in the active area, the edge breakdown of the device cannot be suppressed because there is no guard ring structure, and the edge breakdown of different devices is different, resulting in premature breakdown of some devices. As a result, the breakdown voltage is relatively small (average value is about 66V), and the edge breakdown conditions of different samples are different, resulting in poor uniformity of the breakdown voltage. 100 samples were selected from the same wafer to test the extreme breakdown voltage. The difference is: 8.6V, corresponding to a percentage of deviation of about 13%.

[0045] Therefore, the...

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Abstract

The invention provides an avalanche photodiode diffusion structure, a preparation method and a diode device. The diffusion structure includes: a central circular active area (1), a first guard ring area (2) and a second guard ring area (3) whose diameter is larger than that of the active area (1) and whose diameters increase in sequence ), a diffusion trench region (4) separated from the second guard ring region (3) by a predetermined distance. Under the premise of not affecting the performance of other key parameters of the device such as dark current and bandwidth gain product, the edge breakdown is suppressed, and the complicated diffusion process of the traditional guard ring process is simplified.

Description

technical field [0001] The invention relates to the field of photodetectors, in particular to an avalanche photodiode diffusion structure, a preparation method and a diode device. Background technique [0002] With the development of optoelectronic chip technology, high-frequency, low-noise and high-sensitivity III-V semiconductor photodetectors based on p-n junction structures are increasingly being used in high-bit-rate, long-distance optical fiber communication systems and Near-infrared detection field and high-sensitivity single-photon detection field and spectral analysis. With a separate absorption and multiplication layer (Separate Absorption and Multiplication Avalanche Photodiode: SAM-APD) and a separate charge layer (Charge: C) based on this optimization, a separate transition layer (Grading: G) (SACM, SAGM, SAGCM-APD ) avalanche photodiode (APD) structure can provide electrical output signals with high fidelity (ie, low noise). In SAM-APD (and SACM, SAGM, SAGCM-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/107H01L31/18
CPCH01L31/107H01L31/18
Inventor 王亮张博健秦金
Owner UNIV OF SCI & TECH OF CHINA
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