Method and circuit for improving power amplifier overshoot suppression efficiency under triggering of excitation signal and power amplifier

A technology for exciting signals and suppressing efficiency, applied in power amplifiers, improving amplifiers to reduce temperature/power voltage changes, etc., can solve the problems of low stability and low efficiency of power amplifiers, and achieve improved efficiency, high efficiency, and improved stability. Effect

Inactive Publication Date: 2019-07-09
NORTHWEST INST OF NUCLEAR TECH
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  • Application Information

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Problems solved by technology

[0014] The technical problem to be solved by the present invention is to provide a hybrid high-power solid-state pulse power amplifier voltage overshoot suppression and efficiency improvement method under the trigger of an excitation signal, aiming at solving the problem of low stability or low efficiency of the power amplifier, which can simultaneously obtain High stability of class A pulse power amplifier and high efficiency of class B pulse power amplifier

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  • Method and circuit for improving power amplifier overshoot suppression efficiency under triggering of excitation signal and power amplifier
  • Method and circuit for improving power amplifier overshoot suppression efficiency under triggering of excitation signal and power amplifier
  • Method and circuit for improving power amplifier overshoot suppression efficiency under triggering of excitation signal and power amplifier

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Embodiment Construction

[0076] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0077] The invention provides a hybrid high-power solid-state pulse power amplifier voltage overshoot suppression and efficiency improvement method under the trigger of an excitation signal, which can suppress the high-power pulse power amplifier voltage overshoot and obtain high efficiency at the same time.

[0078] The pulse power amplifier of the present invention works in the high-efficiency class B in the front part of the microwave excitation signal. Before the falling edge of the excitation signal arrives, the grid bias voltage is adjusted by the grid voltage control circuit to change the working category of the power amplifier, and the grid bias The voltage is adjusted to class A, so that the power amplifier works in class A at the moment of the falling edge of the excitation signal, so that the drain voltage does not overshoot at the mo...

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Abstract

The invention belongs to the field of solid-state microwave power amplifiers, relates to an excitation signal triggered power amplifier overshoot suppression efficiency improvement method, a circuit and a power amplifier. The problem that a power amplifier is low in stability or efficiency is solved. The part, in front of a microwave excitation signal, of the pulse power amplifier works in a high-efficiency class B; before the falling edge of the excitation signal arrives, the grid voltage control circuit is used for adjusting the grid bias voltage, the working type of the power amplifier is changed, and the grid bias voltage is adjusted to the type A, so that the power amplifier works in the type A at the moment of the falling edge of the excitation signal, and the drain voltage does notgenerate overshoot at the moment of closing the microwave excitation signal.

Description

technical field [0001] The invention belongs to the field of solid-state microwave power amplifiers, and in particular relates to a method and circuit for suppressing voltage overshoot and improving efficiency of a pulse power amplifier triggered by an excitation signal. Background technique [0002] The microwave power amplifier is an important part of the microwave system, which can amplify the weak microwave signal to the required power level, and is generally located at the end of the transmitter. widely used. With the maturity of the third-generation semiconductor material GaN process, the output power of the power amplifier has also increased significantly. At present, the output power of a single tube has exceeded 1kW. For example, the paper A kW-class AlGaN / GaN HEMT Pallet Amplifier for S-band High Power Application published by E.Mitani et al. in 2007 (published in Proceedings of the 2nd European Microwave Integrated Circuits Conference), L.Haapala et al. in 2016 ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/30H03F3/24
CPCH03F1/30H03F3/24
Inventor 方文饶黄文华王璐璐付超邵浩李平章勇华杨志强巴涛
Owner NORTHWEST INST OF NUCLEAR TECH
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