A kind of nanometer material and preparation method thereof, optoelectronic device

A technology for optoelectronic devices and nanomaterials, applied in the fields of electrical solid devices, nanotechnology, electrical components, etc., can solve the problems of high cost, complex preparation process, low hole injection efficiency, etc., to improve luminous efficiency and performance, improve air The effect of hole transport efficiency and improving migration efficiency

Active Publication Date: 2020-06-23
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a nanomaterial and its preparation method, and a photoelectric device, aiming to solve the problems of low hole injection efficiency, complex preparation process and high cost of the existing anode modification materials

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  • A kind of nanometer material and preparation method thereof, optoelectronic device
  • A kind of nanometer material and preparation method thereof, optoelectronic device

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preparation example Construction

[0024] see figure 1 , figure 1 A flow chart of a preferred embodiment of a nanomaterial preparation method provided by the present invention, as shown in the figure, includes steps:

[0025] S10, dissolving monosaccharide, molybdenum source and sulfur source in water, keeping warm for hydrothermal reaction, and preparing polysaccharide-molybdenum disulfide precursor;

[0026] S20. Drying and calcining the polysaccharide-molybdenum disulfide precursor under an inert atmosphere to prepare spherical carbon-molybdenum disulfide nanosheet nanomaterials.

[0027] In this embodiment, the monosaccharide is dehydrated and polycondensed into a polysaccharide template under hydrothermal conditions, and the space confinement effect of the polysaccharide in situ template can effectively confine MoS 2 Growth of nanosheets in the crystal c-direction to generate ultrathin MoS 2 Nanosheets.

[0028] Specifically, the molybdenum source and the sulfur source generate MoS under hydrothermal c...

Embodiment 1

[0044] 1, the preparation method of nanometer material comprises steps:

[0045] 1) Dissolve 1g of glucose, 0.1g of ammonium molybdate and 0.25g of ammonium sulfide into 20ml of water;

[0046] 2) After the glucose, ammonium molybdate and ammonium sulfide are completely dissolved, transfer them to the hydrothermal reaction kettle. o C for 24h, cooled and washed (washed twice with water, washed once with absolute ethanol), and then at 50 o Dry at C to prepare MoS 2 / polysaccharide precursor;

[0047] 3), the MoS 2 / The polysaccharide precursor was heated to 800 °C under an Ar atmosphere o C was calcined for 5 hours to obtain carbon-molybdenum disulfide nanomaterials.

[0048] 2. Application of nanomaterials:

[0049] 1) Dissolve the carbon-molybdenum disulfide nanomaterial in 10ml of NMP, and disperse it ultrasonically to form a carbon-molybdenum disulfide hybrid nano solution of about 0.8M~1M;

[0050] 2) Spin-coat the carbon-molybdenum disulfide hybrid nano solution ...

Embodiment 2

[0053] 1, the preparation method of nanometer material comprises steps:

[0054] 1) Dissolve 1g fructose, 0.1g sodium molybdate and 0.25g thiourea into 20ml water;

[0055] 2) After the fructose, sodium molybdate and thiourea are completely dissolved, transfer them to the hydrothermal reaction kettle. o C for 26h, cooled and washed (washed twice with water, washed once with absolute ethanol), and then at 50 o Dry at C to prepare MoS 2 / polysaccharide precursor;

[0056] 3), the MoS 2 / Polysaccharide precursor was heated to 850C and roasted for 4h under Ar atmosphere to prepare carbon-molybdenum disulfide nanomaterials.

[0057] 2. Application of nanomaterials:

[0058] 1) Dissolve the carbon-molybdenum disulfide nanomaterial in 10ml DMSO, and disperse it ultrasonically to form a carbon-molybdenum disulfide hybrid nano solution of about 0.8M~1M;

[0059] 2) Spin-coat the carbon-molybdenum disulfide hybrid nano solution onto the ITO substrate at 200-300 o C annealing and...

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Abstract

The invention discloses a nanomaterial, a preparation method thereof, and a photoelectric device, wherein the nanomaterial includes spherical carbon and MoS embedded on the surface of the spherical carbon 2 Nanosheets. MoS via abundant hydroxyl groups and glycosidic bonds on the surface of polysaccharide templates 2 Nanocrystals are wrapped, thus confining the MoS 2 Growth trend of nanocrystals in the c-direction for ultrathin MoS 2 nanosheets and make the MoS 2 The interface active sites of the nanosheets are fully exposed, which improves the hole transport efficiency, and the carbon hybrid structure effectively improves the carrier transfer efficiency; the nanomaterial is used as the hole transport layer, MoS 2 The synergistic effect of interfacial active sites and carbon hybrid structure improves the luminous efficiency and performance of optoelectronic devices.

Description

technical field [0001] The invention relates to the field of photoelectric devices, in particular to a nanometer material, a preparation method thereof, and a photoelectric device. Background technique [0002] In the current quantum dot light-emitting diodes, ITO is usually used as a transparent electrode, and PEDOT:PSS is usually used to modify the surface of ITO as an anode buffer layer, but the acidity of PEDOT:PSS itself will cause the performance of quantum dot light-emitting diodes to decay. In order to solve this problem, some people began to develop a new anode buffer layer to replace PEDOT:PSS. Among them, transition metal oxides (WO 3 , MoO 3 , NiO, Cu 2 O, ReO 3 and V 2 o 5 ) is used as an anode buffer layer in many quantum dot light-emitting diodes, and has achieved good performance. [0003] Transition metal oxides usually have deeper electron energy levels and better hole injection efficiency. However, transition metal oxides have problems such as high ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H10K50/15H10K2102/00
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION
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