Manufacturing method of semiconductor

Abstract

The present invention provides a manufacturing method of a semiconductor. The manufacturing method of the semiconductor comprises the steps of: forming a dielectric layer on a substrate; allowing an inner connection line in the dielectric layer to connect with conductive metal and extend onto the dielectric layer to form a metal layer; and employing a gas source comprising hydrogen with the concentration of 75-80% and argon with the concentration of 20-25% for annealing treatment. The method can reduce the generation of a leak current path so as to improve the efficiency of semiconductor elements.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor manufacturing method. Background technique [0002] The use of plasma is widely reflected in semiconductor processes, such as thin film deposition, etching, ion implantation, etc. However, due to the influence of the process environment, the plasma will cause the charge to move along the metal, and a so-called antenna effect will occur, which will affect the performance of the device. [0003] That is to say, the plasma used in the process will accumulate charges on the surface of the dielectric layer, and the charges accumulated on the surface of the dielectric layer will move to the silicon substrate along the metal interconnection, so that part of the charges will adhere to the silicon substrate. substrate, resulting in the generation of leakage current paths. [0004] Therefore, how to effectively solve the problem of a large amount of current leakage derived f...

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Problems solved by technology

However, due to the influence of the process environment, the plasma will cause the charge to move along the metal, causing the so-called antenna effect (antenna effect), which affects the performance of the device

[0003] That is to say, the plasma used in the process will accumulate charges on the surface of the dielectric layer, and the charges accumulated on the surface of the dielectric layer will move to the silicon substrate along the metal interconnection, so that part of the charges will adhere to the silicon substrate. substrate, resulting in the creation of leakage current paths

[0004] Therefore, how to effectively solve the problem of a large amount of current leakage derived from the use of plasma in the known process, and manufacture high-yield and high-reliability semiconductor elements to ensure the quality and performance of the elements is one of the issues that the industry wants to solve urgently.