Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

The Treatment Method of Aliasing Phenomenon in Computational Lithography System Model

A system model and computational lithography technology, applied in computing, computer components, pattern recognition in signals, etc., can solve problems such as distortion of light intensity calculations, reduction of accuracy of computational lithography models, etc.

Active Publication Date: 2019-09-03
MOYAN COMPUTATIONAL SCI NANJING PTE LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] This application provides a processing method for calculating the aliasing phenomenon in the lithography system model, which can be used to solve the problem of frequency aliasing in related technologies, which will lead to distortion of light intensity calculations, and then reduce the accuracy of the calculation lithography model. question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • The Treatment Method of Aliasing Phenomenon in Computational Lithography System Model
  • The Treatment Method of Aliasing Phenomenon in Computational Lithography System Model
  • The Treatment Method of Aliasing Phenomenon in Computational Lithography System Model

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0062] In order to enable those skilled in the art to better understand the technical solutions in the embodiments of the present application, and to make the above-mentioned purposes, features and advantages of the embodiments of the present application more obvious and understandable, the technical solutions in the embodiments of the present application are described below in conjunction with the accompanying drawings The program is described in further detail.

[0063] In the method provided in the embodiment of the present application, the execution subject of each step may be a terminal. The terminal is used to calculate the relevant data of the lithography system in the lithography process, and perform lithography according to the lithography model. Such as figure 1 mentioned. It shows a schematic diagram of the structure of the photolithography model. A light source 101 , a condenser lens 102 , a reticle 103 , a projection pupil 104 , a projection lens 105 and a wafe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present application discloses a processing method for calculating the aliasing phenomenon in a lithography system model. The method includes: determining the number of sampling points for discrete sampling of the mask function according to the effective sampling range and the preset spatial sampling interval, and the mask The function is used to represent the geometric shape of the mask; according to the spatial sampling interval, an anti-aliasing filter function is established, and the anti-aliasing filter function is used to limit the bandwidth of the mask function in the frequency domain space; according to the anti-aliasing filter function and sampling points Quantity, the convolution operation is performed on the anti-aliasing filter function and the mask function to obtain the spatial sampling signal filtered by the mask function; the spatial sampling signal and the kernel function are convolved to determine the light intensity distribution. In the present application, the bandwidth of the mask function is limited by filtering and sampling the mask function through the anti-aliasing filter function, so as to avoid distortion of light intensity calculation caused by aliasing, and improve the accuracy of calculating the lithography model.

Description

technical field [0001] The present application belongs to the technical field of semiconductor lithography, and in particular relates to a method for processing aliasing phenomena in computational lithography system models. Background technique [0002] Smart devices are inseparable from today's life, and smart phones, smart homes and smart wearable devices are generally related to everyone. The operation of smart devices is more of the silent operation of the chip behind the scenes. At present, in the production process of chips, the lithography technology, which is the key technology in chip production, uses the principle of photochemical reaction to transfer the pattern designed in advance on the mask to a wafer substrate, so that etching and ion implantation become possible. Diffraction occurs when light is irradiated on the mask, and the light of different diffraction orders converges on the surface of the photoresist. This process is an optical process; the image on ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06K9/00G06F17/15G06F17/14
CPCG06F17/14G06F17/15G06F2218/10G06F2218/02
Inventor 阎江崔绍春陈雪莲梁文清
Owner MOYAN COMPUTATIONAL SCI NANJING PTE LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com