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Rare earth ion-doped bismuth oxyhalide up-conversion luminescent material and preparation method thereof

A technology of bismuth oxyhalide and rare earth ions, applied in the field of rare earth ion doped bismuth oxyhalide up-conversion luminescent materials and its preparation, can solve the problems of low luminous efficiency and low luminous efficiency

Inactive Publication Date: 2019-07-05
KUNMING UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Currently Eu 3+ The application of ions in upconversion luminescence is limited because of their insensitivity to near-infrared excitation, Yb 3+ The ions have a large absorption cross section of about 980nm, which can effectively transfer the excitation energy to Eu 3+ ions, making Eu 3+ The upconversion luminescence of ions is possible, but its luminous efficiency is not very high, such as Sr in molybdate materials 2 CaO 6 Eu found in 3+ ionic anomalous 5 D. 0 → 7 f 4 (698 nm) up-conversion luminescence phenomenon, low luminous efficiency and Eu in molybdate matrix materials 3+ The polarization environment of the ion is related to

Method used

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  • Rare earth ion-doped bismuth oxyhalide up-conversion luminescent material and preparation method thereof
  • Rare earth ion-doped bismuth oxyhalide up-conversion luminescent material and preparation method thereof
  • Rare earth ion-doped bismuth oxyhalide up-conversion luminescent material and preparation method thereof

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Experimental program
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Embodiment 1

[0023] A rare earth ion doped bismuth oxyhalide layered semiconductor Bi 0.84 Eu 0.01 Yb 0.15 The preparation method of OCl up-conversion luminescent material, concrete steps are as follows:

[0024] A preparation method of Eu ion-doped bismuth oxyhalide semiconductor optical anti-counterfeiting material, the specific steps are as follows: Bi is weighed according to the molar ratio of Bi ions, Eu ions, Yb ions and Cl ions in a ratio of 0.84:0.01:0.15:1.2 2 o 3 、Eu 2 o 3 , Yb 2 o 3 , NH 4 Cl four kinds of raw materials (20% of the excess chlorine source is to prevent the lack of chlorine source in the reaction process), the Bi 2 o 3 、Eu 2 o 3 , Yb 2 o 3 , NH 4 Add grinding aids to the agate mortar, mix and grind evenly, place the ground reactants in a crucible, cover the surface of the crucible and sinter at a temperature of 500 °C for 3 hours, cool to room temperature, and sinter the sintered sample Grinding again in a ceramic mortar, the chemical formula can be...

Embodiment 2

[0029] A rare earth ion doped bismuth oxyhalide layered semiconductor Bi 0.85 Eu 0.04 Yb 0..01 The preparation method of OF up-conversion luminescent material, concrete steps are as follows:

[0030] A preparation method of Eu ion-doped bismuth oxyhalide semiconductor optical anti-counterfeiting material, characterized in that, the specific steps are as follows: according to the molar ratio of Bi ion, Eu ion, Yb ion and F ion, the ratio is 0.85:0.04:0.01:1.1 Weigh Bi 2 o 3 、Eu 2 o 3 , Yb 2 o 3 , NH 4 F four kinds of raw materials (NH 4 The 10% excess of F is to prevent the lack of F source during the reaction), and the Bi 2 o 3 、Eu 2 o 3 , Yb 2 o 3 , NH 4 F Add grinding aids into the agate mortar and mix and grind evenly, place the ground reactants in a crucible, cover the surface of the crucible and sinter at a temperature of 400°C for 4 hours, cool to room temperature, and place in a ceramic mortar Grinding, you can get the chemical formula Bi 0.85 Eu 0.04...

Embodiment 3

[0032] A rare earth ion doped bismuth oxyhalide layered semiconductor Bi 0.79 Eu 0.01 Yb 0.20 The preparation method of OBr up-conversion luminescent material, concrete steps are as follows:

[0033] A preparation method of Eu ion-doped bismuth oxyhalide semiconductor optical anti-counterfeiting material, characterized in that, the specific steps are as follows: according to the molar ratio of Bi ion, Eu ion, Yb ion and Br ion is the ratio of 0.79:0.01:0.20:1.2 Weigh Bi 2 o 3 , Eu 2 o 3 , Yb 2 o 3 , NH 4 Br four kinds of raw materials (NH 4 The 20% excess of Br is to prevent the lack of Br source during the reaction) to Bi 2 o 3 , Eu 2 o 3 , Yb 2 o 3 , NH 4 F Add grinding aids to the agate mortar and mix evenly, place in the crucible, cover the surface of the crucible and sinter at 450°C for 1 hour, cool to room temperature, and grind again in the ceramic mortar to obtain The chemical formula is Bi 0.79 Eu 0.01 Yb 0.20 Rare earth ion doped bismuth oxyhalide...

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Abstract

The invention discloses a rare earth ion-doped bismuth oxyhalide layered semiconductor up-conversion luminescent material and a preparation method thereof, and belongs to the technical field of luminescent materials. The general formula of the n luminescent material is Bi1-x-yEuxYbyOM, wherein x is 0.01-0.04, x is more than or equal to 0 and less than or equal to 0.04, y is 0.01-0.20, y is more than or equal to 0.01 and less than or equal to 0.20, and M is one of elements F, Cl, and Br. The luminescence property of Eu<3+> ions doped in the rare earth ion-doped bismuth oxyhalide layered semiconductor luminescent material has a super sensitive response to different matrix structures, laser power and temperature, the material can easily emit white light under the irradiation of near infraredlaser, and the bismuth oxyhalide layered semiconductor material has stable physical and chemical properties; and the synthesis method has the advantages of simplicity, easiness in operation, and low cost of the required raw materials, so the rare earth ion-doped bismuth oxyhalide layered semiconductor up-conversion luminescent material can be widely applied to fields of white LEDs, photovoltaic ferroelectric materials, optomechanical materials and optoelectronic multifunctional devices.

Description

technical field [0001] The invention relates to a rare earth ion-doped bismuth oxyhalide up-conversion luminescent material and a preparation method thereof, belonging to the technical field of luminescent materials. Background technique [0002] Bismuth oxyhalide layered semiconductor materials composed of two-dimensional flakes are increasingly interested in layered semiconductor materials by researchers all over the world due to their anisotropic properties and a wide range of potential practical applications. Especially in the next generation of ultra-thin solar cells and photovoltaic devices, bismuth oxyhalide layered semiconductor materials are a promising material. In recent years, due to their special luminescent behavior and their potential application value in luminescent materials, the preparation and characterization of such bismuth oxyhalide layered semiconductor materials have gradually received attention. However, so far, our basic scientific understanding of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/86
CPCC09K11/7783Y02B20/00
Inventor 宋志国王莎莎刘桐宋亚湃尹兆益杨正文邱建备
Owner KUNMING UNIV OF SCI & TECH
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