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High-current MOS transistor with stable operation

A MOS tube, stable operation technology, applied in the field of MOS tubes, can solve problems such as unstable operation, achieve stable operation, simple preparation, and shorten time-consuming effects

Inactive Publication Date: 2019-06-28
山东沂光集成电路有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a stable high-current MOS tube to solve the problem of unstable operation of the existing MOS tube proposed in the background technology

Method used

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  • High-current MOS transistor with stable operation
  • High-current MOS transistor with stable operation
  • High-current MOS transistor with stable operation

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Embodiment Construction

[0048] A high-current MOS tube with stable operation, the preparation process is as follows:

[0049] Step 1: double well implantation to generate n well and p well on the silicon wafer; steps of n well formation: epitaxial growth, original oxide growth, first layer mask, n well implantation, n well implantation (high energy), annealing; p Steps of well formation: second layer mask, p-well implantation, p-well implantation (high energy), annealing;

[0050] Step 2: shallow trench isolation is used to isolate the silicon active area; the steps of shallow trench isolation: trench etching, oxide filling and oxide planarization; in which the trench is etched, and a layer of oxide layer with a thickness of about 150 angstroms is grown on the silicon surface; It can be used as an isolation layer to protect the active area from chemical contamination during the process of removing the nitride. A thin layer of silicon nitride is grown on the silicon surface. Since silicon nitride is a...

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Abstract

The invention discloses a high-current MOS transistor with stable operation. The preparation process is as follows: an n-well and a p-well are generated on a silicon wafer by double-well implantation,the shallow trench isolation is used for isolating a silicon active region, a gate structure is obtained by growing a gate oxide layer, depositing polysilicon and engraving, the shallow implantationof source and drain regions is formed by LDD implantation, sidewalls is made to protect channels during subsequent source and drain implantation, with medium-energy source and drain implantation, a formed junction depths is greater than the implantation depth of LDD, silicide contact is formed by metal contact to tightly bond metal tungsten and silicon together, and a first metal line between thetransistor and a contact is formed by local interconnection. The high-current MOS transistor has the advantages of stable operation, good promotion value, simple preparation, shortened preparation time, and the improvement of the preparation efficiency.

Description

technical field [0001] The invention belongs to the technical field of MOS tubes, and in particular relates to a large-current MOS tube with stable operation. Background technique [0002] MOS transistors are metal, oxide, semiconductor field effect transistors, or metal-insulators, semiconductors. [0003] The existing MOS tube has the problem of unstable operation. Contents of the invention [0004] The purpose of the present invention is to provide a large current MOS transistor with stable operation, so as to solve the problem of unstable operation of the existing MOS transistor proposed in the background art. [0005] In order to achieve the above object, the present invention provides the following technical solution: a high-current MOS tube with stable operation, and the preparation process is as follows: [0006] Step 1: Double-well implantation to generate n-well and p-well on the silicon wafer; [0007] Step 2: Shallow trench isolation is used to isolate the s...

Claims

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Application Information

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IPC IPC(8): H01L21/8234H01L27/088
Inventor 杨洪文王兴超路尚伟张伟解学军
Owner 山东沂光集成电路有限公司
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