Silicon carbide single crystal growing device

Abstract

The invention discloses a silicon carbide single crystal growing device. The silicon carbide single crystal growing device comprises a working chamber, a connecting rod penetrating into the working chamber in a liftable manner, a first driving mechanism for driving the connecting rod to lift, a crucible arranged inside the working chamber and a heating mechanism for heating the crucible, wherein the crucible comprises a crucible cover fixedly arranged at the bottom of the connecting rod and a crucible body detachably connected to the lower side of the crucible cover; the connecting rod comprises a rod body, a first passage formed in the rod body and used for inputting and outputting a refrigerant, and a second passage formed in the rod body and used for inflating process gas; the first passage and the second passage are mutually separated; the second passage communicates with the working chamber; the connecting rod is used for cooling the crucible cover through the refrigerant and / or the process gas; a gas outlet is further formed in the working chamber. The silicon carbide single crystal growing device optimizes a heat conducting path, so that heat is transferred only through thecrucible cover, a requirement on a temperature field with higher temperature on the lower part and lower temperature on the upper part is easier to achieve, and the silicon carbide single crystal growing quality is improved.

Description

technical field [0001] The invention relates to a silicon carbide single crystal growth device. Background technique [0002] The physical vapor transport method (PVT method) has become the main technical method for the growth of silicon carbide single crystal. This method is to install the silicon carbide polycrystalline raw material at the bottom of the graphite crucible body, and cover the graphite crucible body with a graphite crucible cover to form a In a confined space, silicon carbide seed crystals are installed on the lower surface of the graphite crucible cover. By heating the system composed of the graphite crucible body and the graphite crucible cover, the silicon carbide polycrystalline raw material in the graphite crucible body is sublimated and the silicon carbide polycrystalline raw material is maintained. With a suitable temperature gradient between the silicon carbide seed crystal and the silicon carbide seed crystal, the sublimated silicon carbide particles...

AI Technical Summary

Problems solved by technology

[0003] In the existing crucibles used for growing silicon carbide single crystals, the graphite crucible body is generally installed on the crucible support rod, so that the heat conduction at the bottom of the graphite crucible will be dissipated due to the heat conduction of the crucible support rod, and the graphite crucible must be maintained. The process temperature at the bottom of the crucible will increase the heating power to waste energy, and more importantly, it is difficult to achieve the uniformity of the temperature at the bottom of the graphite crucible, which will affect the growth of silicon carbide single crystal

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